Now showing items 1-3 of 3

  • Characterization and application of a-SiCx:H films for the passivation of the c-Si surface 

    Martín Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2002-01)
    Article
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    In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement ...
  • Fullerene thin-film transistors fabricated on polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Orpella García, Alberto; Vetter, M; Alcubilla González, Ramón (2007-07)
    Article
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    Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant ...
  • Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures 

    Torres, I; Vetter, M; Ferré Burrull, José; Marsal, L F; Orpella García, Alberto; Alcubilla González, Ramón; Pallarès Marzal, Josep (2007-04)
    Article
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    In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous silicon carbide layers after an annealing process. Both intrinsic and phosphorus-doped amorphous silicon carbide layers ...