Now showing items 1-20 of 71

    • A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications 

      Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Conference report
      Open Access
      This paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better ...
    • A large signal nonlinear MODFET model from small signal S-parameters 

      O'Callaghan Castellà, Juan Manuel; Beyer, Jb (1989)
      Conference report
      Open Access
      A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is ...
    • A rapid, low-cost, and scalable technique for printing state-of-the-art organic field-effcet transistors 

      Temiño, Inés; Del Pozo León, Freddy; Ajayakumar, M.R.; Galindo Lorente, Sergi; Puigdollers i González, Joaquim; Mas Torrent, Marta (2016-06-13)
      Article
      Open Access
      In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors ...
    • A simple low-cost electrocardiogram synchronizer 

      Amorós García de Valdecasas, Susana; Galvez Monton, Carolina; Rodríguez Leor, Oriol; O'Callaghan Castellà, Juan Manuel (Multidisciplinary Digital Publishing Institute (MDPI), 2021-09-01)
      Article
      Open Access
      Electrocardiogram (ECG) synchronization is useful to avoid the effects of cardiac motion in medical measurements, and is widely used in standard medical imaging. A number of medical equipment include embedded commercial ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Restricted access - publisher's policy
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Air stable organic semiconductors based on diindolo[3,2-a:3',2'-c]carbazole 

      Cuadrado Santolaria, Alba; Cuesta, Jessica; Puigdollers i González, Joaquim; Velasco Castrillo, Maria Dolores (2018-11-01)
      Article
      Open Access
      The extension of the p-conjugated 10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (triindole) system via the introduction of donor moieties of different nature (phenyl, naphthyl, methylthiophenyl and benzo[b]thienyl) at ...
    • All-digital self-adaptive PVTA variation aware clock generation system for DFS 

      Pérez Puigdemont, Jordi; Calomarde Palomino, Antonio; Moll Echeto, Francisco de Borja (2014)
      Conference report
      Open Access
      An all-digital self-adaptive clock generation system capable of adapt the clock frequency to compensate the effects of PVTA variations on the IC propagation delay and satisfy an externally set propagation length condition ...
    • Amplificador de potencia en banda ka 

      Corbella Sanahuja, Ignasi; Fortuny Guasch, Joaquim (1990)
      Conference report
      Open Access
    • Amplificadores multietapa de bajo en las bandas de 20 y 30ghz 

      Artal, E; Corbella Sanahuja, Ignasi; Busquets, C; Pradell i Cara, Lluís (1989)
      Conference report
      Open Access
      Microstrip coupled lines technology has been used to design and built low noise amplifiers in 20 and 30 GHz bands. Active devices are GaAs MESFET and HEMT in chip form. The amplifiers have input and output waveguide ...
    • Analisis de respuesta de transistores basados en silicio macroporoso 

      Najar Molina, Raul (Universitat Politècnica de Catalunya, 2010-07-05)
      Master thesis (pre-Bologna period)
      Restricted access - author's decision
      La electrónica se trata, sin duda, de una de las ramas científicas que ha sufrido una mayor y más rápida evolución en los últimos años. Desde la invención del diodo a principios del siglo XX, una serie de nuevos dispositivos, ...
    • Analytical modelling of bjt neurtral base region under variable injection conditions 

      Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
      Article
      Restricted access - publisher's policy
      We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...
    • Análisis de mezcladores activos con transistores MESFET de AsGa mediante series de Wiener-Volterra 

      Elias Fusté, Antoni; de los Reyes, Elías (Unión Científica Internacional de Radio (URSI), 1983)
      Conference report
      Open Access
      This paper describes techniques for the analysis and desing of active mixer using GaAs FET's. These techniques are based on a expansion in a Wierner-Volterra series of the nonlinearities of a simple model for the transistor ...
    • Area-optimal transistor folding for 1-D gridded cell design 

      Cortadella, Jordi (2013-11)
      Article
      Open Access
      The 1-D design style with gridded design rules is gaining ground for addressing the printability issues in subwavelength photolithography. One of the synthesis problems in cell generation is transistor folding, which ...
    • Banco automatizado para la medida de parámetros S, de ruido y características DC de transistores en oblea 

      Pradell i Cara, Lluís; Purroy, Francesc; Subirats, M.; Ballester, A.; Torres Torres, Francisco; O'Callaghan Castellà, Juan Manuel; Corbella Sanahuja, Ignasi (1994)
      Conference report
      Open Access
      The AMR Group has an automatized bench for the measurement of DC-characteristics, [S] parameters (45 MHz- 40 GHz) and noise parameters (2-26.5 GHz) of microwave on-wafer transistors. The hardware configuration is described, ...
    • Bipolar transistor vertical vertical scaling framework 

      Castañer Muñoz, Luis María; Alcubilla González, Ramón; Benavent, A (1994-12)
      Article
      Restricted access - publisher's policy
      Scaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ...
    • Caracterització de transistors orgànics de capa fina 

      Fernández Infante, Joan (Universitat Politècnica de Catalunya, 2016-01)
      Master thesis (pre-Bologna period)
      Open Access
      This project deals with manufacture and analysis by electrical characterization of organic thin film transistors.
    • Caracterización de dispositivos de AsGa MESFET. Amplificadores de bajo ruido. Ganancia máxima. Ampliación del margen dinámico 

      de los Reyes, Elías; Elias Fusté, Antoni (1980)
      Conference report
      Open Access
      A method for de characterization of solid state amplifying devices has been developed thats allows one the determination of the input and o output amplifier, matching networks for low noise, maximum power transfer and ...
    • Caracterización de transistores de Microoendas mediante la técnica de Calibrción TRL 

      Pradell i Cara, Lluís; Sabater, C; Artal, E; Comerón Tejero, Adolfo; Corbella Sanahuja, Ignasi (-, 1989)
      Conference report
      Open Access
    • CATRENE-PANAMA WP1: integrated PA Milestone M1.3 technology, approach & system choice for home networking 

      Dufis, Cédric Yvan; Mateo Peña, Diego; Bofill, Adrià; González Jiménez, José Luis (2009-10-30)
      External research report
      Open Access
    • Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers 

      Martín Martínez, Javier; Diaz, Javier; Rodríguez, Rosana; Nafria, Montse; Aymerich Humet, Xavier; Roca Moreno, Elisenda; Fernández Fernández, Francisco V.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Open Access
      A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ...