Browsing by Subject "Transistors"
Now showing items 1-20 of 72
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A battery-less, self-sustaining RF energy harvesting circuit with TFETs for µW power applications
(Institute of Electrical and Electronics Engineers (IEEE), 2016)
Conference report
Open AccessThis paper proposes a Tunnel FET (TFET) power management circuit for RF energy harvesting applications. In contrast with conventional MOSFET technologies, the improved electrical characteristics of TFETs promise a better ... -
A large signal nonlinear MODFET model from small signal S-parameters
(1989)
Conference report
Open AccessA general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is ... -
A rapid, low-cost, and scalable technique for printing state-of-the-art organic field-effcet transistors
(2016-06-13)
Article
Open AccessIn the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors ... -
A simple low-cost electrocardiogram synchronizer
(Multidisciplinary Digital Publishing Institute (MDPI), 2021-09-01)
Article
Open AccessElectrocardiogram (ECG) synchronization is useful to avoid the effects of cardiac motion in medical measurements, and is widely used in standard medical imaging. A number of medical equipment include embedded commercial ... -
Aging in CMOS RF linear power amplifiers: an experimental study
(IEEE Microwave Theory and Techniques Society, 2021-02-01)
Article
Open AccessAn extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ... -
Air stable organic semiconductors based on diindolo[3,2-a:3',2'-c]carbazole
(2018-11-01)
Article
Open AccessThe extension of the p-conjugated 10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (triindole) system via the introduction of donor moieties of different nature (phenyl, naphthyl, methylthiophenyl and benzo[b]thienyl) at ... -
All-digital self-adaptive PVTA variation aware clock generation system for DFS
(2014)
Conference report
Open AccessAn all-digital self-adaptive clock generation system capable of adapt the clock frequency to compensate the effects of PVTA variations on the IC propagation delay and satisfy an externally set propagation length condition ... -
Amplificador de potencia en banda ka
(1990)
Conference report
Open Access -
Amplificadores multietapa de bajo en las bandas de 20 y 30ghz
(1989)
Conference report
Open AccessMicrostrip coupled lines technology has been used to design and built low noise amplifiers in 20 and 30 GHz bands. Active devices are GaAs MESFET and HEMT in chip form. The amplifiers have input and output waveguide ... -
Analisis de respuesta de transistores basados en silicio macroporoso
(Universitat Politècnica de Catalunya, 2010-07-05)
Master thesis (pre-Bologna period)
Restricted access - author's decisionLa electrónica se trata, sin duda, de una de las ramas científicas que ha sufrido una mayor y más rápida evolución en los últimos años. Desde la invención del diodo a principios del siglo XX, una serie de nuevos dispositivos, ... -
Analytical modelling of bjt neurtral base region under variable injection conditions
(1997-08)
Article
Restricted access - publisher's policyWe present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ... -
Análisis de mezcladores activos con transistores MESFET de AsGa mediante series de Wiener-Volterra
(Unión Científica Internacional de Radio (URSI), 1983)
Conference report
Open AccessThis paper describes techniques for the analysis and desing of active mixer using GaAs FET's. These techniques are based on a expansion in a Wierner-Volterra series of the nonlinearities of a simple model for the transistor ... -
Area-optimal transistor folding for 1-D gridded cell design
(2013-11)
Article
Open AccessThe 1-D design style with gridded design rules is gaining ground for addressing the printability issues in subwavelength photolithography. One of the synthesis problems in cell generation is transistor folding, which ... -
Banco automatizado para la medida de parámetros S, de ruido y características DC de transistores en oblea
(1994)
Conference report
Open AccessThe AMR Group has an automatized bench for the measurement of DC-characteristics, [S] parameters (45 MHz- 40 GHz) and noise parameters (2-26.5 GHz) of microwave on-wafer transistors. The hardware configuration is described, ... -
Bipolar transistor vertical vertical scaling framework
(1994-12)
Article
Restricted access - publisher's policyScaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ... -
Caracterització de transistors orgànics de capa fina
(Universitat Politècnica de Catalunya, 2016-01)
Master thesis (pre-Bologna period)
Open AccessThis project deals with manufacture and analysis by electrical characterization of organic thin film transistors. -
Caracterización de dispositivos de AsGa MESFET. Amplificadores de bajo ruido. Ganancia máxima. Ampliación del margen dinámico
(1980)
Conference report
Open AccessA method for de characterization of solid state amplifying devices has been developed thats allows one the determination of the input and o output amplifier, matching networks for low noise, maximum power transfer and ... -
Caracterización de transistores de Microoendas mediante la técnica de Calibrción TRL
(-, 1989)
Conference report
Open Access -
CATRENE-PANAMA WP1: integrated PA Milestone M1.3 technology, approach & system choice for home networking
(2009-10-30)
Research report
Open Access -
Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers
(Institute of Electrical and Electronics Engineers (IEEE), 2014)
Conference report
Open AccessA new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ...
