Browsing by Author "Sirakoulis, Georgios"
Now showing items 1-16 of 16
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1-D memristor networks as ternary storage cells
(Institute of Electrical and Electronics Engineers (IEEE), 2016)
Conference report
Restricted access - publisher's policyDue to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great ... -
Crossbar-based memristive logic-in-memory architecture
(2017-04-01)
Article
Open AccessThe use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the ... -
Effect of lattice defects on the transport properties of graphene nanoribbon
(2019)
Conference report
Restricted access - publisher's policyGraphene nanoribbons are the most emerging graphene structures for electronic applications. Here, we present our calculation results on the impact of lattice defects on the transport properties of these structures. Preliminary ... -
Electronic properties of graphene nanoribbons with defects
(2021-01-27)
Article
Open AccessGraphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ... -
Experience on material implication computing with an electromechanical memristor emulator
(IEEE Press, 2016)
Conference report
Open AccessMemristors are being considered as a promising emerging device able to introduce new paradigms in both data storage and computing. In this paper the authors introduce the concept of a quasi-ideal experimental device that ... -
Experimental investigation of memristance enhancement
(2019)
Conference report
Restricted access - publisher's policyMemristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ... -
Experimental study of artificial neural networks using a digital memristor simulator
(2018-02-01)
Article
Open AccessThis paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ... -
Exploring the voltage divider approach for accurate memristor state tuning
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Conference report
Restricted access - publisher's policyThe maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage ... -
Future and emergent materials and devices for resistive switching
(2018)
Conference report
Restricted access - publisher's policyDuring the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent ... -
Multi-valued logic circuits on graphene quantum point contact devices
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Conference report
Open AccessGraphene quantum point contacts (G-QPC) combine switching operations with quantized conductance, which can be modulated by top and back gates. Here we use the conductance quantization to design and simulate multi-valued ... -
Noise-induced Performance Enhancement of Variability-aware Memristor Networks
(2019)
Conference report
Restricted access - publisher's policyMemristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ... -
Plasma modified silicon nitride resistive switching memories
(2019)
Conference report
Restricted access - publisher's policyIn this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching ... -
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
(2021-04)
Article
Open AccessResistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ... -
Probabilistic resistive switching device modeling based on Markov jump processes
(Institute of Electrical and Electronics Engineers (IEEE), 2020-12-02)
Article
Open AccessIn this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes ... -
Voltage divider for self-limited analog state programing of memristors
(2019-06-19)
Article
Open AccessResistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory ... -
Wave computing with passive memristive networks
(Institute of Electrical and Electronics Engineers (IEEE), 2019)
Conference report
Open AccessSince CMOS technology approaches its physical limits, the spotlight of computing technologies and architectures shifts to unconventional computing approaches. In this area, novel computing systems, inspired by natural and ...
