Now showing items 1-20 of 74

  • 3D TCAD modeling of laser processed c-Si solar cells 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Restricted access - publisher's policy
    This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
  • A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors 

    Castañer Muñoz, Luis María; Sureda, S; Bardés Llorensí, Daniel; Alcubilla González, Ramón (1994-03)
    Article
    Open Access
    A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The ...
  • An IBC solar cell for the UPC CubeSat-1 mission 

    Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
    Conference report
    Restricted access - publisher's policy
    In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ...
  • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

    Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
    Article
    Restricted access - publisher's policy
    Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
  • Boron diffused emitters passivated with Al2O3 films 

    Masmitjà Rusiñol, Gerard; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Calle Martín, Eric; García Molina, Francisco Miguel; Martín García, Isidro; Orpella García, Alberto; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2013)
    Conference report
    Restricted access - publisher's policy
    In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ...
  • CAD directions for high performance asynchronous circuits 

    Stevens, Kenneth S.; Rotem, Shai; Burns, Steven M.; Cortadella, Jordi; Ginosar, Ran; Kishinevsky, Michael; Roncken, Marly (Association for Computing Machinery (ACM), 1999)
    Conference report
    Open Access
    This paper describes a novel methodology for high performance asynchronous design based on timed circuits and on CAD support for their synthesis using relative timing. This methodology was developed for a prototype iA32 ...
  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
    Article
    Restricted access - publisher's policy
    In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
  • Colloidal crystal wires 

    Tymczenko, M; Marsal, L E; Todorov Trifonov, Trifon; Rodriguez, Isabelle; Ramiro-Manzano, F; Pallares, J; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Meseguer, F (2008-06-18)
    Article
    Restricted access - publisher's policy
    Several configurations of colloidal wires are obtained by infiltration of charge-stabilized polystyrene spheres into cylindrical pores of a silicon membrane (see figure). As channel dimensions are comparable to those of ...
  • CVD graphene-FET based cascode circuits: a design exploration and fabrication towards intrinsic gain enhancement 

    Iannazzo Soteras, Mario Enrique; Alarcón Cot, Eduardo José; Pandey, Himadri; Passi, V.; Lemme, M. C. (Institute of Electrical and Electronics Engineers (IEEE), 2016)
    Conference report
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    This paper presents the design exploration of a basic cascode circuit (CAS) targeted to increase the intrinsic gain A# of a graphene field-effect-transistor (GFET) by decreasing its output conductance go. First, the ...
  • Desarrollo de nuevas aleaciones Al-Si-Cu microaleadas 

    Gual Amengual, Pau; Izquierdo Pascual, Mariano (Universitat Politècnica de Catalunya, 2019-02-06)
    Bachelor thesis
    Restricted access - author's decision
    [CASTELLÀ] El objetivo principal de este trabajo ha sido realizar un estudio del efecto de los diferentes elementos de aleación añadidos a la aleación de aluminio AlSi9Cu3. Estos elementos son el Zn, Mg, Cr, Zr y el afinante ...
  • Design of a phase locked loop for optical upconversion 

    Herranz Salazar, Francisco (Universitat Politècnica de Catalunya, 2018-05)
    Master thesis
    Open Access
    Silicon Photonics has become a key technology in the design of devices for the next generation of wireless communications. One of the most important challenges of 5G is the transport of microwave signals over fiber links, ...
  • Dielectric metal dielectric antireflection plasmonic layers 

    Ros Costals, Eloi (Universitat Politècnica de Catalunya, 2017-06)
    Bachelor thesis
    Open Access
    Dielectric/Metal/Dielectric structures using Transition Metal Oxides (TMOs) as a dielectric layer and very thin-film layers of metal will be fabricated and their opto-electrical properties evaluated. In particular, ...
  • Disseny i muntatge d'un convertidor d'alta eficiencia 

    Paradell Solà, Pol (Universitat Politècnica de Catalunya, 2016-04-20)
    Master thesis
    Open Access
    L’objectiu d’aquest projecte és crear un prototip d’un convertidor trifàsic de dos nivells amb la tecnologia de carbur de silici (SiC). Dins l’objectiu de crear un convertidor trifàsic, hi ha diferents fites que hem ...
  • Efecto de los elementos microaleantes en las aleaciones de aluminio para fundición 

    Martínez Cabornero, Leire; Martínez Mercadé, Francesc (Universitat Politècnica de Catalunya, 2019-06)
    Bachelor thesis
    Restricted access - author's decision
    Covenantee:  Bostlan / Aleastur / CIE Automotive. Componentes Vilanova
    [CASTELLÀ] El objetivo principal de este trabajo es realizar un estudio de los diferentes elementos de aleación añadidos al AlSi9Cu3, proporcionado por CIE Componentes VIlanova, también denominado EN AC 46500. Estos elementos ...
  • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

    Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
    Article
    Restricted access - publisher's policy
    Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...
  • Effect of liquid aluminium alloy and ultrasound to corrosion resistance of PVD coating 

    Palau Cruz, Damià (Universitat Politècnica de Catalunya, 2017-01)
    Master thesis
    Restricted access - author's decision
    Covenantee:  Università degli Studi di Brescia
    The aim of the project is resolve the corrosion problems of a steel bar, coating them and study if the coating affects the vibration needed to delate the dendrites of the aluminium alloy due to obtain a globular structure. ...
  • Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters 

    Lumbreras Carrasco, David; Zaragoza Bertomeu, Jordi; Mon González, Juan; Gálvez, Eduardo; Collado Escolano, Alfonso (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference lecture
    Open Access
    Power devices based on wide band-gap materials are emerging as alternatives to silicon-based devices. These new devices allow designing and building converters with fewer power losses, and are thus more highly efficient ...
  • Estudio de técnicas de metalización para la fabricación de células solares 

    Parra Santos, Ester (Universitat Politècnica de Catalunya, 2016-06)
    Bachelor thesis
    Open Access
    This work is part of two large projects carried out by two researchers from the Polytechnic University of Catalonia, which aim to manufacture Interdigitated Back-Contact silicon solar cells (IBCs) using processes at low ...
  • Fabricación de un sensor solar de alta precisión en dos ejes para el satélite SeoSat 

    Calle Martín, Eric (Universitat Politècnica de Catalunya, 2011-09-06)
    Master thesis (pre-Bologna period)
    Open Access
    English: The goal of this project is the fabrication of a two axis sun sensor for the attitude control of the SeoSat satellite. This sensor should detect the position of the sun with high accuracy and at an angle FOV (Field ...
  • Fabricacion y caracterizacion de guias opticas integradas sobre sustratos de silicio 

    Torner Sabata, Lluís; Alcubilla González, Ramón; Calderer Cardona, Josep (1991)
    Conference report
    Open Access
    Silicon nitride (Si 3 N4 ) planar optical waveguides have been successfully grown by lowpressure chemical vapor deposition (LPCVD). Silicon p-type wafers with a (100) orientation were used as substrates, and the Si3 N4 was ...