Now showing items 1-6 of 6

  • 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells 

    Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
    Conference lecture
    Open Access
    Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ...
  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon 

    von Gastrow, Guillaume; Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Yli-Koski, Marko; Conesa-Boj, Sònia; Fontcuberta i Morral, Anna; Savin, Hele (2015-11)
    Article
    Open Access
    We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination ...
  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency 

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
    Article
    Open Access
    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ...
  • High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates 

    Ortega Villasclaras, Pablo Rafael; Calle, Eric; von Gastrow, Guillaume; Repo, Päivikki; Carrió, David; Savin, Hele; Alcubilla, Ramón (2015)
    Article
    Open Access
    This work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very ...
  • Long-term stability of Al2O3 passivated black silicon 

    Calle, Eric; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Martín García, Isidro; Savin, Hele; Alcubilla González, Ramón (Elsevier, 2016)
    Conference lecture
    Restricted access - publisher's policy
    In this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with ...
  • Recombination processes in passivated boron-implanted black silicon emitters 

    von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón; Husein, Sebastian; Nietzold, Tara; Bertoni, Mariana; Savin, Hele (American Institute of Physics (AIP), 2017-05-14)
    Article
    Open Access
    In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter ...