Browsing by Author "Rodríguez Martínez, Rosana"
Now showing items 1-13 of 13
-
A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture
(2014-05-05)
Article
Restricted access - publisher's policy -
A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI
(2018-01-01)
Article
Open AccessStatistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ... -
Aging in CMOS RF linear power amplifiers: an experimental study
(IEEE Microwave Theory and Techniques Society, 2021-02-01)
Article
Open AccessAn extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ... -
Aging in CMOS RF linear power amplifiers: experimental comparison and modeling
(Institute of Electrical and Electronics Engineers (IEEE), 2019)
Conference report
Restricted access - publisher's policyThis paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ... -
Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Conference report
Restricted access - publisher's policyElectronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ... -
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
(2022-05-01)
Article
Open AccessIn this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ... -
Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Conference report
Restricted access - publisher's policyThis paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ... -
Experimental verification of memristor-based material implication NAND operation
(Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
Article
Open AccessMemristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ... -
Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices
(2020-03-01)
Article
Open AccessResistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ... -
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
(2021-10-01)
Article
Open AccessIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
MOSFET degradation dependence on input signal power in a RF power amplifier
(2017-06-25)
Article
Open AccessAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ... -
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
(2021-04)
Article
Open AccessResistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ... -
Stochastic resonance effect in binary STDP performed by RRAM devices
(Institute of Electrical and Electronics Engineers (IEEE), 2022)
Conference report
Open AccessThe beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...
