Now showing items 1-3 of 3

  • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
  • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

    Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
    Open Access
    Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
  • Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers 

    Martín Martínez, Javier; Diaz, Javier; Rodríguez, Rosana; Nafria, Montse; Aymerich Humet, Xavier; Roca Moreno, Elisenda; Fernández Fernández, Francisco V.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2014)
    Conference report
    Open Access
    A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ...