Now showing items 1-7 of 7

    • Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers 

      Altet Sanahujes, Josep; González, José Luis; Gómez Salinas, Dídac; Perpiñà Gilabet, Xavier; Claeys, Wilfrid; Grauby, Stéphane; Dufis, Cédric Yvan; Vellvehi, Miquel; Mateo Peña, Diego; Reverter Cubarsí, Ferran; Dilhaire, Stefan; Jordà, Xavier (2014-05)
      Article
      Restricted access - publisher's policy
      This paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit ...
    • MOSFET dynamic thermal sensor for IC testing applications 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
      Article
      Open Access
      This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ...
    • Review of temperature sensors as monitors for RFMMW built-in testing and self-calibration schemes 

      Altet Sanahujes, Josep; Aldrete Vidrio, Héctor; Reverter Cubarsí, Ferran; Gómez Salinas, Dídac; Gonzalez Jimenez, J. L.; Onabajo, Marvin; Silva Martinez, Jose; Martineau, B.; Perpiñà Gilabet, Xavier; Abdallah, Louay; Stratigopoulos, Haralampos-G.; Aragonès Cervera, Xavier; Jordà, Xavier; Vellvehi, Miquel; Dilhaire, Stefan; Mir, Salvador; Mateo Peña, Diego (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Restricted access - publisher's policy
      This paper presents an overview of the work done so far related to the use of temperature sensors as performance monitors for RF and MMW circuits with the goal to implement built-in testing or self-calibration techniques. ...
    • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
      Article
      Open Access
      © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
    • Study of heat sources interacting in integrated circuits by laser mirage effect 

      Perpiñà Gilabet, Xavier; Jordà, Xavier; Vellvehi, Miquel; Altet Sanahujes, Josep (2014-08-25)
      Article
      Restricted access - publisher's policy
      This work exploits the mirage effect to analyze multiple heat sources thermally interacting in an integrated circuit (IC) by means of a probe IR laser beam, which strikes on the die lateral walls and passes through the die ...
    • Temperature sensors and measurements to test analogue circuits: questions and answers 

      Altet Sanahujes, Josep; Rubio Sola, Jose Antonio; Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Aragonès Cervera, Xavier; Jordà, Xavier; Vellvehi, Miquel; Mateo Peña, Diego (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Conference report
      Restricted access - publisher's policy
      We have been working in the field of temperature sensors and temperature measurements to test analogue circuits during the past 10 years. As we have presented different works in many conferences, we have collected many ...
    • Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits 

      Perpiñà Gilabet, Xavier; León, Javier; Altet Sanahujes, Josep; Vellvehi, Miquel; Reverter Cubarsí, Ferran; Barajas Ojeda, Enrique; Jordà, Xavier (2017-02-27)
      Article
      Open Access
      With thermal phase lag measurements, current paths are tracked in a Class A radio frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz and 2 GHz, and its resulting thermal field was ...