Exploració per tema "Nanoelectronics"

Ara es mostren els items 1-20 de 37

    • A nanometric displacement measurement system using differential optical feedback interferometry 

      Azcona Guerrero, Francisco Javier; Atashkhooei, Reza; Royo Royo, Santiago; Méndez Astudillo, Jorge; Jha, Ajit (2013-11-01)
      Article
      Accés restringit per política de l'editorial

    • A novel graphene nanoribbon XOR gate design 

      Rallis, Konstantinos; Sirakoulis, Georgios Ch.; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio; Dimitrakis, Panagiotis (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Graphene is a 2D material with spectacular properties. Its elasticity and biocompatibility make it appropriate for stretchable electronics and bioelectronics applications respectfully. In this work, we present the design ...

    • A TCAD model for silicon nitride based memristive devices 

      Stavroulakis, Emmanouil; Vasileiadis, Nikolaos; Mavropoulis, Alexandros; Chatzipaschalis, Ioannis; Tsipas, Evangelos; Rallis, Konstantinos; Vourkas, Ioannis; Dimitrakis, Panagiotis; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Si 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial ...

    • Adaptive clock with useful jitter 

      Cortadella, Jordi; Lavagno, Luciano; López Muñoz, Pedro; Lupon Navazo, Marc; Moreno Vega, Alberto; Roca Pérez, Antoni; Sapatnekar, Sachin S. (2015-05-19)
      Report de recerca
      Accés obert
      The growing variability in nanoelectronic devices due to uncertainties from the manufacturing process and environmental conditions (power supply, temperature, aging) requires increasing design guardbands, forcing circuits ...

    • Adaptive fault-tolerant architecture for unreliable device technologies 

      Aymerich Capdevila, Nivard; Cotofana, Sorin; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper introduces an efficient adaptive redundant architecture, which makes use of the averaging cell (AVG) principle in order to improve the reliability of nanoscale circuits and systems. We define an adaptive averaging ...

    • Architectural exploration of large-scale hierarchical chip multiprocessors 

      Nikitin, Nikita; San Pedro Martín, Javier de; Cortadella, Jordi (2013)
      Article
      Accés restringit per política de l'editorial
      The continuous scaling of nanoelectronics is increasing the complexity of chip multiprocessors (CMPs) and exacerbating the memory wall problem. As CMPs become more complex, the memory subsystem is organized into more ...

    • Binding and orientation of 3D DNA structures on UV-lithography patterned PIII surface 

      Taulé Flores, Pere (Universitat Politècnica de Catalunya, 2018-02-07)
      Treball Final de Grau
      Accés obert
      Realitzat a/amb:   University of Sydney
      DNA nanotechnology shows promising applications due to its ability to present more than 200 functionizable sites on its structure with a 6nm spatial resolution. However, DNA nanostructures cannot be directly self-assembled ...

    • Case study of a differential single-pole double-throw RF switch using memristors 

      Tsipas, Evangelos; Stavroulakis, Emmanouil; Chatzipaschalis, Ioannis; Rallis, Konstantinos; Vasileiadis, Nikolaos; Dimitrakis, Panagiotis; Kostopoulos, Athanasios; Konstantinidis, George; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Nanotechnology-enabled novel RF switches have emerged as a promising alternative to MEMS, owing to current technological limitations of the latter. Additionally, recent research endeavors in the telecommunications sector ...

    • Confronting positions: para-vs. meta-functionalization in triindole for p-type air-stable OTFTs 

      Cuadrado Santolaria, Alba; Bujaldón Carbó, Roger; Fabregat Pallejà, Clara; Puigdollers i González, Joaquim; Velasco Castrillo, Maria Dolores (2024-05)
      Article
      Accés obert
      The 5,10,15-trihexyl-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole core, namely triindole, is well-known for its prominent hole-transporting properties and air stability. The functionalization of this core is also ...

    • Controlled degradation stochastic resonance in adaptive averaging cell-based architectures 

      Aymerich Capdevila, Nivard; Cotofana, Sorin; Rubio Sola, Jose Antonio (2013-11)
      Article
      Accés restringit per política de l'editorial
      In this paper, we first analyze the degradation stochastic resonance (DSR) effect in the context of adaptive averaging (AD-AVG) architectures. The AD-AVG is the adaptive version of the well-known AVG architecture . It is ...

    • Current characteristics of defective GNR nanoelectronic devices 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio; Karafyllidis, Ioannis (2022)
      Text en actes de congrés
      Accés obert
      The most promising Graphene structures for the development of nanoelectronics and sensor applications are Graphene nanoribbons (GNRs). GNRs with perfect lattices have been extensively investigated in the research literature; ...

    • Deconstructing the governing dissipative phenomena in the nanoscale 

      Santos Hernández, Sergio; Amadei, Carlo Alberto; Tang, Tzu-Chieh; Barcons Xixons, Víctor; Chiesa, Matteo (2014-01)
      Report de recerca
      Accés obert
      An expression describing the controlling parameters involved in short range nanoscale dissipation is proposed and supported by simulations and experimental findings. The expression is deconstructed into the geometrical, ...

    • Design and fabrication of a single electron transistor (SET) 

      Aizpurua Iraola, Gorka (Universitat Politècnica de Catalunya, 2023-07-12)
      Projecte Final de Màster Oficial
      Accés obert
      Realitzat a/amb:   Institut de Microelectrònica de Barcelona
      In this master's thesis, the design and development of the manufacturing process of a single electron transistor (SET) in silicon has been carried out. A SET is a basic building block for the realization of qubits based ...

    • Design of broadband CNFET LNA based on extracted I-V closed-form equation 

      Saberkari, Alireza; Khorgami, Omid; Bagheri, Javad; Madec, Morgan; Hosseini Golgoo, Seyed Mohsen; Alarcón Cot, Eduardo José (2018-03-31)
      Article
      Accés obert
      A procedure of extracting a closed-form user-friendly I-V equation for short channel carbon nanotube field-effect transistors (CNFET) in the saturation region is presented by employing a relation between CNFET parameters ...

    • Efectos de las radiaciones cósmicas sobre estructuras nanométricas 

      Ubach Vilaplana, Sergi (Universitat Politècnica de Catalunya, 2013-06-10)
      Treball Final de Grau
      Accés restringit per decisió de l'autor
      El objetivo principal de este proyecto es realizar un estudio completo, para aprender, relacionar y asimilar todos los conceptos que pueden aparecer dentro de la temática de los efectos de las radiaciones cósmicas sobre ...

    • Effect of receiver shape and volume on the Alzheimer disease for molecular communication via diffusion 

      Isik, Ibrahim; Yilmaz, Hüseyin Birkan; Demirkol, Ilker Seyfettin; Tagluk, Mehemet Emin (2020-09-01)
      Article
      Accés obert

    • Electronic properties of graphene nanoribbons with defects 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
      Article
      Accés obert
      Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...

    • Graphene plasmonic enhanced detectors for mid-infrared and terahertz range 

      Grabulosa i Vallmajó, Adrià (Universitat Politècnica de Catalunya, 2020-07-16)
      Projecte Final de Màster Oficial
      Accés restringit per acord de confidencialitat
      Realitzat a/amb:   Universitat Autònoma de Barcelona / Universitat de Barcelona

    • Lithography parametric yield estimation model to predict layout pattern distortions with a reduced set of lithography simulations 

      Gómez Fernández, Sergio; Moll Echeto, Francisco de Borja; Mauricio Ferré, Juan (2014-07-01)
      Article
      Accés obert
      A lithography parametric yield estimation model is presented to evaluate the lithography distortion in a printed layout due to lithography hotspots. The aim of the proposed yield model is to provide a new metric that enables ...

    • Machine learning techniques for resource prediction in nanoelectronic circuit design 

      Ricart Geli, Narcís (Universitat Politècnica de Catalunya, 2017-07-03)
      Projecte Final de Màster Oficial
      Accés obert
      This master’s thesis is about the use of machine learning techniques in the field of nanoelectronic circuit design. It has been developed in collaboration with eSilicon Corporation, which is a company specialized in ...