Exploració per tema "Nanoelectrònica"
Ara es mostren els items 1-20 de 36
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A nanometric displacement measurement system using differential optical feedback interferometry
(2013-11-01)
Article
Accés restringit per política de l'editorial -
A novel graphene nanoribbon XOR gate design
(Institute of Electrical and Electronics Engineers (IEEE), 2022)
Text en actes de congrés
Accés restringit per política de l'editorialGraphene is a 2D material with spectacular properties. Its elasticity and biocompatibility make it appropriate for stretchable electronics and bioelectronics applications respectfully. In this work, we present the design ... -
A TCAD model for silicon nitride based memristive devices
(Institute of Electrical and Electronics Engineers (IEEE), 2023)
Text en actes de congrés
Accés restringit per política de l'editorialSi 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial ... -
Adaptive clock with useful jitter
(2015-05-19)
Report de recerca
Accés obertThe growing variability in nanoelectronic devices due to uncertainties from the manufacturing process and environmental conditions (power supply, temperature, aging) requires increasing design guardbands, forcing circuits ... -
Architectural exploration of large-scale hierarchical chip multiprocessors
(2013)
Article
Accés restringit per política de l'editorialThe continuous scaling of nanoelectronics is increasing the complexity of chip multiprocessors (CMPs) and exacerbating the memory wall problem. As CMPs become more complex, the memory subsystem is organized into more ... -
Case study of a differential single-pole double-throw RF switch using memristors
(Institute of Electrical and Electronics Engineers (IEEE), 2023)
Text en actes de congrés
Accés restringit per política de l'editorialNanotechnology-enabled novel RF switches have emerged as a promising alternative to MEMS, owing to current technological limitations of the latter. Additionally, recent research endeavors in the telecommunications sector ... -
Confronting positions: para-vs. meta-functionalization in triindole for p-type air-stable OTFTs
(2024-05)
Article
Accés obertThe 5,10,15-trihexyl-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole core, namely triindole, is well-known for its prominent hole-transporting properties and air stability. The functionalization of this core is also ... -
Contribució a la caracterització del microscopi de força atòmica
(Universitat Politècnica de Catalunya, 2013-10-31)
Tesi
Accés obertDes de la seva creació, el microscopi de força atòmica (AFM) ha estat àmpliament utilitzat sobretot per la caracterització de superfícies, obtenint imatges topogràfiques amb una resolució espacial de l’ordre o fins i tot ... -
Controlled degradation stochastic resonance in adaptive averaging cell-based architectures
(2013-11)
Article
Accés restringit per política de l'editorialIn this paper, we first analyze the degradation stochastic resonance (DSR) effect in the context of adaptive averaging (AD-AVG) architectures. The AD-AVG is the adaptive version of the well-known AVG architecture . It is ... -
Current characteristics of defective GNR nanoelectronic devices
(2022)
Text en actes de congrés
Accés obertThe most promising Graphene structures for the development of nanoelectronics and sensor applications are Graphene nanoribbons (GNRs). GNRs with perfect lattices have been extensively investigated in the research literature; ... -
Deconstructing the governing dissipative phenomena in the nanoscale
(2014-01)
Report de recerca
Accés obertAn expression describing the controlling parameters involved in short range nanoscale dissipation is proposed and supported by simulations and experimental findings. The expression is deconstructed into the geometrical, ... -
Design and fabrication of a single electron transistor (SET)
(Universitat Politècnica de Catalunya, 2023-07-12)
Projecte Final de Màster Oficial
Accés obert
Realitzat a/amb: Institut de Microelectrònica de BarcelonaIn this master's thesis, the design and development of the manufacturing process of a single electron transistor (SET) in silicon has been carried out. A SET is a basic building block for the realization of qubits based ... -
Efectos de las radiaciones cósmicas sobre estructuras nanométricas
(Universitat Politècnica de Catalunya, 2013-06-10)
Treball Final de Grau
Accés restringit per decisió de l'autorEl objetivo principal de este proyecto es realizar un estudio completo, para aprender, relacionar y asimilar todos los conceptos que pueden aparecer dentro de la temática de los efectos de las radiaciones cósmicas sobre ... -
Effect of receiver shape and volume on the Alzheimer disease for molecular communication via diffusion
(2020-09-01)
Article
Accés obert -
Electronic properties of graphene nanoribbons with defects
(2021-01-27)
Article
Accés obertGraphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ... -
Graphene plasmonic enhanced detectors for mid-infrared and terahertz range
(Universitat Politècnica de Catalunya, 2020-07-16)
Projecte Final de Màster Oficial
Accés restringit per acord de confidencialitat
Realitzat a/amb: Universitat Autònoma de Barcelona / Universitat de Barcelona -
Lithography parametric yield estimation model to predict layout pattern distortions with a reduced set of lithography simulations
(2014-07-01)
Article
Accés obertA lithography parametric yield estimation model is presented to evaluate the lithography distortion in a printed layout due to lithography hotspots. The aim of the proposed yield model is to provide a new metric that enables ... -
Machine learning techniques for resource prediction in nanoelectronic circuit design
(Universitat Politècnica de Catalunya, 2017-07-03)
Projecte Final de Màster Oficial
Accés obertThis master’s thesis is about the use of machine learning techniques in the field of nanoelectronic circuit design. It has been developed in collaboration with eSilicon Corporation, which is a company specialized in ... -
Main properties of Al2O3 thin films deposited by magnetron sputtering of an Al2O3 ceramic target at different radio-frequency power and argon pressure and their passivation effect on p-type c-Si wafers
(2016-11-30)
Article
Accés obertIn this work, 50-nm thick Al2O3 thin films were deposited at room temperature by magnetron sputtering from an Al2O3 ceramic target at different RF power and argon pressure values. The sputtering technique could be preferred ... -
MEMS technologies for energy harvesting
(Springer, 2016-11-11)
Capítol de llibre
Accés obertThe objective of this chapter is to introduce the technology of Microelectromechanical Systems, MEMS, and their application to emerging energy harvesting devices. The chapter begins with a general introduction to the most ...