Now showing items 1-2 of 2

    • Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers 

      Martín Martínez, Javier; Diaz, Javier; Rodríguez, Rosana; Nafria, Montse; Aymerich Humet, Xavier; Roca Moreno, Elisenda; Fernández Fernández, Francisco V.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Open Access
      A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ...
    • Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells 

      Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ...