Now showing items 1-11 of 11

  • 5GHz CMOS all-pass filter-based true time delay cell 

    Aghazadeh, Seyed Rasoul; Martínez García, Herminio; Saberkari, Alireza (2018-12-22)
    Article
    Open Access
    Analog CMOS time-delay cells realized by passive components, e.g., lumped LC delay lines, are inefficient in terms of area for multi-GHz frequencies. All-pass filters considered as active circuits can, therefore, be the ...
  • A Highly time sensitive XOR gate for probe attempt detectors 

    Manich Bou, Salvador; Strasser, Martin (2013-09-05)
    Article
    Restricted access - publisher's policy
    Probe attempt detectors are sensors designed to protect buses of secure chips against the physical contact of probes. The operation principle of these detectors relies on the comparison of the delay propagation times ...
  • Analysis and spike detection of neural data from a CMOS MEA system 

    Ibáñez Martínez, Laura (Universitat Politècnica de Catalunya, 2019-10-31)
    Bachelor thesis
    Open Access
    Covenantee:  Technische Universität Berlin
  • Characterization of 28 nm FDSOI MOS and application to the design of a low-power 2.4 GHz LNA 

    Río Jiménez, Jaume del (Universitat Politècnica de Catalunya, 2017-05)
    Master thesis
    Open Access
    IoT is expected to connect billions of devices all over world in the next years, and in a near future, it is expected to use LR-WPAN in a wide variety of applications. Not all the devices will require of high performance ...
  • Charge trapping control in MOS capacitors 

    Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; López Rodríguez, Gema; Martín García, Isidro; Blokhina, Elena; Pons Nin, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2016-12-26)
    Article
    Open Access
    This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and ...
  • Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors 

    Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; Lopez Chavez, G.; Pons Nin, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2017-08-31)
    Article
    Open Access
    The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices ...
  • Efficiency comparison between SiC- and Si-based active neutral-point clamped converters 

    Nicolás Apruzzese, Joan; Maset, Enrique; Busquets Monge, Sergio; Esteve, Vicente; Bordonau Farrerons, José; Calle Prado, Alejandro; Jordán, José (2015)
    Conference report
    Restricted access - publisher's policy
    This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide ...
  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Open Access
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
  • Smart control of chemical MOX gas sensors 

    Monge Víllora, Oscar (Universitat Politècnica de Catalunya, 2018-09)
    Master thesis
    Restricted access - author's decision
    The objective of this work is to present different control loops designed for improving the time response of metal-oxide gas sensors. This type of sensors generally present slow responses and in some cases, drift. Focusing ...
  • Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences 

    Li, Binhong; Berbel Artal, Néstor; Boyer, A.; BenDhia, S.; Fernández García, Raúl (2011)
    Conference report
    Open Access
    This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of ...
  • Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells 

    Almora, Osbel; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim; Garcia-Belmonte, Germà (2017-08-01)
    Article
    Open Access
    Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are ...