Now showing items 1-13 of 13

  • Caracterización automatizada de sistemas fotovoltaicos conectados a red 

    Berlanga Herrera, Luis (Universitat Politècnica de Catalunya, 2015-02-16)
    Bachelor thesis
    Open Access
    [ANGLÈS] The main objective is the implementation of an automated system for the characterization of grid connected photovoltaic applications. This project arises by the need of automating the configuration and the measures ...
  • Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules 

    Piasecki, S.; Mir Cantarellas, Antonio; Rabkowski, J.; Rodríguez Cortés, Pedro (2013)
    Conference report
    Restricted access - publisher's policy
    This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms ...
  • Disseny i implementació d'una font d'alimentació commutada per màquines de tatuar amb topologia flyback i bateries de liti 

    Pulido Martín, Eugeni (Universitat Politècnica de Catalunya, 2016)
    Master thesis (pre-Bologna period)
    Open Access
    Within this Final Degree Project ,a SMPS flyback power supply feeded with lithium batteries will carry out. Moreover , the Power supply will be build using a Demonstration Circuit board supplied by Linear Technologies , ...
  • Efficiency comparison between SiC- and Si-based active neutral-point clamped converters 

    Nicolás Apruzzese, Joan; Maset, Enrique; Busquets Monge, Sergio; Esteve, Vicente; Bordonau Farrerons, José; Calle Prado, Alejandro; Jordán, José (2015)
    Conference report
    Restricted access - publisher's policy
    This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide ...
  • Electromagnetic compatibility of CMOS circuits along the lifetime 

    Fernández García, Raúl; Ruiz, José María; Gil Galí, Ignacio; Morata Cariñena, Marta (2011)
    Conference lecture
    Open Access
    The continuous scaling of CMOS circuits has set the MOSFET transistor in the nanoelectronic era. In this context, the functionality and complexity of integrated circuits (ICs) are growing up. However, the operation voltage ...
  • Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout 

    Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, B.; Boyer, A.; BenDhia, S. (2011-09-16)
    Article
    Open Access
    In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under ...
  • Hot spot detection in integrated circuits laterally accessing to the substrate 

    Perpiñà, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel (2010)
    Conference report
    Open Access
    Thermal management of nano estructures requires the use of temperature monitoring strategies. In this work we expose a strategy bases on sensing the heat-flux within the chip substrate with a probe-laser beam. As the beam ...
  • Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect 

    Perpiñà, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel; Mestres, Narcís (2010)
    Article
    Open Access
    This Letter presents a solution for locating hot spots in active integrated circuits (IC) and devices. This method is based on sensing the phase lag between the power periodically dissipated by a device integrated in an ...
  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Open Access
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
  • MOSFET dynamic thermal sensor for IC testing applications 

    Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
    Article
    Open Access
    This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ...
  • Power MOSFET State Of Health prediction 

    Aliagas Puigdomènech, Gerard (Universitat Politècnica de Catalunya, 2019-06)
    Bachelor thesis
    Restricted access - confidentiality agreement
  • Ring oscillator switching noise under NBTI wearout 

    Fernández García, Raúl; Gil Galí, Ignacio; Ruiz, José María; Morata Cariñena, Marta (2011)
    Conference report
    Open Access
    In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified ...
  • Toward understanding the wide distribution of time scales in negative bias temperature instability 

    Kaczer, Ben; Grasser, Tibor; Fernández García, Raúl; Groeseneken, Guido (2007)
    Part of book or chapter of book
    Restricted access - publisher's policy