Now showing items 1-11 of 11

    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Open Access
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Open Access
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Conference report
      Restricted access - publisher's policy
      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
    • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafría Maqueda, Montserrat; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
      Restricted access - publisher's policy
      Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
    • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

      Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
      Article
      Restricted access - publisher's policy
      In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Experimental verification of memristor-based material implication NAND operation 

      Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
      Article
      Open Access
      Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
    • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

      Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
      Article
      Open Access
      Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
    • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

      Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
      Article
      Open Access
      In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Open Access
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
    • Stochastic resonance effect in binary STDP performed by RRAM devices 

      Salvador Aguilera, Emili; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Crespo Yepes, Albert; Miranda Castellano, Enrique Alberto; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...