Now showing items 1-2 of 2

  • Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells 

    Silvestre Bergés, Santiago; Boronat Moreiro, Alfredo; Colina Brito, Mónica Alejandra; Castañer Muñoz, Luis María; Olea, Javier; Pastor, David; DelPrado, A.; Martil, Ignacio; Gonzalez Diaz, German; Luque, Antonio; Antolin, Elisa; Hernandez, Estela; Ramiro, Iñigo; Artacho, Irene; López, Esther; Martí, Antonio (2013-11)
    Article
    Restricted access - publisher's policy
    In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The ...
  • Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer 

    García Hernansanz, Rodrigo; Garcia Hemme, E.; Montero, D.; Olea Ariza, Javier; Prado Millán, Álvaro del; Martil, Ignacio; Voz Sánchez, Cristóbal; Gerling Sarabia, Luis Guillermo; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2018-10-01)
    Article
    Open Access
    Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong ...