Now showing items 1-3 of 3

    • Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates 

      Martín García, Isidro; Alcañiz, A.; Jiménez Pagán, Alba; López Rodríguez, Gema; del Cañizo Nadal, Carlos; Datas Medina, Alejandro (2020-07-01)
      Article
      Open Access
      Similar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. ...
    • Germanium photovoltaic cells with MoO x hole-selective contacts 

      Alcañiz, A.; López Rodríguez, Gema; Martín García, Isidro; Jiménez Pagán, Alba; Datas Medina, Alejandro; Calle, Eric; Ros Costals, Eloi; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; del Cañizo Nadal, Carlos; Alcubilla González, Ramón (2019-03-15)
      Article
      Open Access
      Very thin, thermally evaporated MoOx (x¿<¿3) layer has been used as transparent hole-selective contact on an n-type Germanium substrate to effectively demonstrate PV conversion capability. The fabricated MoOx/Ge heterojunction ...
    • N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices 

      Jiménez Pagán, Alba; Napolitani, Enrico; Datas Medina, Alejandro; Martín García, Isidro; López Rodríguez, Gema; Cabrero Piris, Mariona; Sgarbossa, Francesco; Milazzo, Ruggero; Carturan, Sara Maria; De Salvador, Davide; López García, Iñaki; Ryu, Yu Kyoung; Martinez Rodrigo, Javier; del Cañizo Nadal, Carlos (2022-01-01)
      Article
      Open Access
      In this article, a method for phosphorous (n-type) doping of germanium based on spin-on dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide (a-SixC1-x:H) layer, which provides both surface ...