Now showing items 1-5 of 5

    • A novel graphene nanoribbon XOR gate design 

      Rallis, Konstantinos; Sirakoulis, Georgios Ch.; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio; Dimitrakis, Panagiotis (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Restricted access - publisher's policy
      Graphene is a 2D material with spectacular properties. Its elasticity and biocompatibility make it appropriate for stretchable electronics and bioelectronics applications respectfully. In this work, we present the design ...
    • Effect of lattice defects on the transport properties of graphene nanoribbon 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Sirakoulis, Georgios; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio (2019)
      Conference report
      Restricted access - publisher's policy
      Graphene nanoribbons are the most emerging graphene structures for electronic applications. Here, we present our calculation results on the impact of lattice defects on the transport properties of these structures. Preliminary ...
    • Electronic properties of graphene nanoribbons with defects 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
      Article
      Open Access
      Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...
    • Future and emergent materials and devices for resistive switching 

      Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2018)
      Conference report
      Restricted access - publisher's policy
      During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent ...
    • Plasma modified silicon nitride resistive switching memories 

      Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Sygelou, L; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2019)
      Conference report
      Restricted access - publisher's policy
      In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching ...