Browsing by Author "Dimitrakis, Panagiotis"

Now showing items 1-12 of 12

    • A novel graphene nanoribbon XOR gate design 

      Rallis, Konstantinos; Sirakoulis, Georgios Ch.; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio; Dimitrakis, Panagiotis (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Restricted access - publisher's policy
      Graphene is a 2D material with spectacular properties. Its elasticity and biocompatibility make it appropriate for stretchable electronics and bioelectronics applications respectfully. In this work, we present the design ...

    • A reprogrammable graphene nanoribbon-based logic gate 

      Rallis, Konstantinos; Fyrigos, Iosif-Angelos; Dimitrakis, Panagiotis; Dimitrakopoulos, George N.; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios Ch. (2023)
      Article
      Open Access
      In this article, taking into consideration the exceptional technological properties of a unique 2-D material, namely Graphene, we are envisioning its usage as the structure material of a non-back-gated re-programmable ...

    • A TCAD model for silicon nitride based memristive devices 

      Stavroulakis, Emmanouil; Vasileiadis, Nikolaos; Mavropoulis, Alexandros; Chatzipaschalis, Ioannis; Tsipas, Evangelos; Rallis, Konstantinos; Vourkas, Ioannis; Dimitrakis, Panagiotis; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference report
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      Si 3 N 4 -based ReRAM devices showcase intriguing performance characteristics of low switching threshold, high endurance and retention that lay the foundations for the development of the next-generation low-power artificial ...

    • Case study of a differential single-pole double-throw RF switch using memristors 

      Tsipas, Evangelos; Stavroulakis, Emmanouil; Chatzipaschalis, Ioannis; Rallis, Konstantinos; Vasileiadis, Nikolaos; Dimitrakis, Panagiotis; Kostopoulos, Athanasios; Konstantinidis, George; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference report
      Restricted access - publisher's policy
      Nanotechnology-enabled novel RF switches have emerged as a promising alternative to MEMS, owing to current technological limitations of the latter. Additionally, recent research endeavors in the telecommunications sector ...

    • Current characteristics of defective GNR nanoelectronic devices 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio; Karafyllidis, Ioannis (2022)
      Conference report
      Open Access
      The most promising Graphene structures for the development of nanoelectronics and sensor applications are Graphene nanoribbons (GNRs). GNRs with perfect lattices have been extensively investigated in the research literature; ...

    • Effect of lattice defects on the transport properties of graphene nanoribbon 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Sirakoulis, Georgios; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio (2019)
      Conference report
      Restricted access - publisher's policy
      Graphene nanoribbons are the most emerging graphene structures for electronic applications. Here, we present our calculation results on the impact of lattice defects on the transport properties of these structures. Preliminary ...

    • Electronic properties of graphene nanoribbons with defects 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
      Article
      Open Access
      Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...

    • Future and emergent materials and devices for resistive switching 

      Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2018)
      Conference report
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      During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent ...

    • MemCA: all-memristor design for deterministic and probabilistic cellular automata hardware realization 

      Ntinas, Vasileios; Fyrigos, Iosif-Angelos; Karamani, Rafallia; Vasileiadis, Nikolaos; Dimitrakis, Panagiotis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023-05-08)
      Article
      Open Access
      Inspired by the behavior of natural systems, Cellular Automata (CA) tackle the demanding long-distance information transfer of conventional computers by the massive parallel computation performed by a set of locally-coupled ...

    • Modeling of memristor-based RF switches 

      Tsipas, Evangelos; Stavroulakis, Emmanouil; Chatzipaschalis, Ioannis; Rallis, Konstantinos; Vasileiadis, Nikolaos; Dimitrakis, Panagiotis; Kostopoulos, Athanasios; Konstantinidis, George; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference lecture
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      The enticing properties of memristors have been exploited for the design of novel circuits with great prospects, owing to the visible challenges posed by CMOS technology. Similarly, research efforts in the field of RF ...

    • Novel circuit design methodology with graphene nanoribbon based devices 

      Rallis, Konstantinos; Dimitrakopoulos, Giorgos; Dimitrakis, Panagiotis; Rubio Sola, Jose Antonio; Cotofana, Sorin; Karafyllidis, Ioannis; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2023)
      Conference report
      Open Access
      Graphene has attracted a high amount of interest in recent years in many research fields, including the field of electronics. Due to its spectacular properties, it is investigated as a candidate material for the realization ...

    • Plasma modified silicon nitride resistive switching memories 

      Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Sygelou, L; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2019)
      Conference report
      Restricted access - publisher's policy
      In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching ...