Now showing items 1-3 of 3

    • Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing 

      De Marcellis, A.; Reig, C; Cubells Beltrán, M. Dolores; Madrenas Boadas, Jordi; Cardoso, F; Cardoso, S.; Freitas, P.P (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Restricted access - publisher's policy
      This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ¿m CMOS ASIC has been specifically developed for this purpose. Then, ...
    • Integration of GMR sensors with different technologies 

      Cubells Beltrán, M. Dolores; Reig Escriva, Abilio Càndid; Madrenas Boadas, Jordi; De Marcellis, A.; Santos, Joana; Cardoso, Susana; Freitas, P.P. (2016-06-01)
      Article
      Open Access
      Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid ...
    • Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology 

      De Marcellis, A.; Cubells Beltrán, M. Dolores; Reig Escriva, Abilio Càndid; Madrenas Boadas, Jordi; zadov, Boris; Paperno, Eugene; Cardoso, S.; Freitas, P.P. (2014-07-01)
      Article
      Restricted access - publisher's policy
      In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the ...