Now showing items 1-9 of 9

    • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

      Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
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    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Open Access
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Beneficial role of noise in Hf-based memristors 

      Rodriguez, Rosana; Martin Martinez, Javier; Salvador, Emili; Crespo Yepes, Albert; Miranda, Enrique Alberto; Nafria, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by ...
    • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

      Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
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      In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Experimental verification of memristor-based material implication NAND operation 

      Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
      Article
      Open Access
      Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
    • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

      Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
      Article
      Open Access
      In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Open Access
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
    • Stochastic resonance effect in binary STDP performed by RRAM devices 

      Salvador Aguilera, Emili; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Crespo Yepes, Albert; Miranda Castellano, Enrique Alberto; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Open Access
      The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...