Now showing items 1-4 of 4

  • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

    Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
    Article
    Restricted access - publisher's policy
  • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

    Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Conference report
    Restricted access - publisher's policy
    This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
  • Experimental verification of memristor-based material implication NAND operation 

    Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
    Article
    Open Access
    Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Open Access
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...