Analog CMOS time-delay cells realized by passive components, e.g., lumped LC delay lines, are inefficient in terms of area for multi-GHz frequencies. All-pass filters considered as active circuits can, therefore, be the ...

The intrinsic behavioral variability in resistive switching devices (also known as 'memristors' or 'ReRAM devices') can be a reliability limiting factor or an opportunity for applications where randomness of resistance ...

A PUF extracts a unique identifier per die using physical random variation caused by variability of the manufacturing process. PUFs can be used for hardware authentication, but also as generators of confidential keys. ...

A D-latch sequential circuit design is presented that exhibits an elevated degree of tolerance to common and differential mode noise in the clock lines. The circuit tolerates noise voltages in the clock signals in the range ...

The unwanted electro-forming process is unavoidable for the practical application of most resistive random access memory (ReRAM) devices, which is always being one of the obstacles for the massive commercialization of this ...

This paper describes the evaluation of available experimental boards, the comparison of their supported set of experiments and other aspects. The second part of this evaluation is focused on the design process of the ...

The continuing trends of device scaling and increase in complexity towards terascale system on chip level of integration are putting growing difficulties into several areas of design. The intrinsic variability problem is ...

This paper reports the implementation of a lowarea low-power 128-bit PUF-based key generation module which exploits a novel Two-Stage IDentification (TSID) cell showing a higher noise immunity then a standard SRAM cell. ...