Now showing items 1-12 of 12

    • Copper phthalocyanine thin filma transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón (2006-06)
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      Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films ...
    • Experimental observation of oxygen-related defect state in pentacene thin films 

      Nadaždy, Vojtech; Durný, Rudolf; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Gmucová, K. (American Institute of Physics, 2007-02-28)
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      The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed ...
    • Fullerene thin-film transistors fabricated on polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Orpella García, Alberto; Vetter, M; Alcubilla González, Ramón (2007-07)
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      Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant ...
    • Improving the efficiency of light-emitting diode based on a thiophene polymer containing a cyano group 

      Cheylan, Stephanie; Bolink, H J; Fraleoni-Morgera, A; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Mencarelli, I; Setti, L; Alcubilla González, Ramón; Badenes, G (2007-12)
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      We report on the overall improvement of a single layer organic light-emitting diode device based on poly{[3-hethylthiophene]-co-3-[2-(p-cyano-phenoxy)ethyl]thiophene} or namely PTOPhCN. This polymer was recently developed ...
    • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet 

      Cheylan, Stephanie; Puigdollers i González, Joaquim; Bolink, Henk J.; Coronado Miralles, Eugenio; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Badenes Guia, Gonçal (American Institute of Physics, 2008-05-14)
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      Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. ...
    • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet - art. no. 096110 

      Cheylan, Stephanie; Puigdollers i González, Joaquim; Bolink, H J; Coronado, E; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Badenes, G (American Institute of Physics (AIP), 2008-05)
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      Thin film transistors based on polyarylamine poly(N,N'-diphenyl-N,N'bis(4-hexylphenyl)-[1,1'biphenyl]-4,4'-diamine (pTPD) were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially ...
    • Interchain and intrachain emission branching in polymer light-emitting diode doped by organic molecules 

      Krautz, D.; Lunedei, E.; Puigdollers i González, Joaquim; Badenes, Gonçal; Alcubilla González, Ramón; Cheylan, Stephanie (2010-01-18)
      Article
      Open Access
      A blend of the polymer poly 2- 2-ethylhexyloxy -5-methoxy-1,4-phenylenevinylene MEH-PPV and the electron-transport molecule tris- 8-hydroxyquinoline aluminum Alq3 has been investigated by means of electroluminescence ...
    • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature 

      Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2009-10)
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      N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...
    • Photodiodes based on fullerene semiconductor 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cheylan, Stephanie; Fonrodona, A; Stella, M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2007-07)
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      Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal ...
    • Study of a thiophene-based polymer for optoelectronic applicartions 

      Cheylan, Stephanie; Fraleoni-Morgera, A; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Settin, L; Alcubilla González, Ramón; Badenes, G; Costa-Bizzarri, P; Lanzi, M (2006-01)
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      A thiophene-based conjugated polymer bearing a cyano group (–CN) as a side chain substituent was successfully synthesized. The polymer evidences an excellent filmability from various organic solvents as well as an enhanced ...
    • Sub-wavelength patterning of the optical near-field 

      Quidaint, R; Badenes, G; Cheylan, Stephanie; Alcubilla González, Ramón; Weeber, J C; Girard, C (2004-01)
      Article
      Open Access
      We report the sub-wavelength patterning of the optical near-field by total internal reflection illumination of a regular array of resonant gold nano-particles. Under appropriate conditions, the in-plane coupling between ...
    • Visible light emission from macroporous Si 

      Cheylan, Stephanie; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Marsal Garví, Lluís Francesc; Pallarès Marzal, Josep; Alcubilla González, Ramón; Badenes, Gonçal (2006-10)
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      Macroporous silicon structures have been fabricated by electrochemical etching. Such fabrication process is known to result in the presence of a thin microporous Si layer at the walls of the macropores and at the surface. ...