Now showing items 1-4 of 4

  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency 

    Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
    Article
    Open Access
    The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ...
  • Germanium photovoltaic cells with MoO x hole-selective contacts 

    Alcañiz, A.; López Rodríguez, Gema; Martín García, Isidro; Jiménez Pagán, Alba; Datas Medina, Alejandro; Calle, Eric; Ros Costals, Eloi; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; del Cañizo Nadal, Carlos; Alcubilla González, Ramón (2019-03-15)
    Article
    Restricted access - publisher's policy
    Very thin, thermally evaporated MoOx (x¿<¿3) layer has been used as transparent hole-selective contact on an n-type Germanium substrate to effectively demonstrate PV conversion capability. The fabricated MoOx/Ge heterojunction ...
  • High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates 

    Ortega Villasclaras, Pablo Rafael; Calle, Eric; von Gastrow, Guillaume; Repo, Päivikki; Carrió, David; Savin, Hele; Alcubilla, Ramón (2015)
    Article
    Open Access
    This work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very ...
  • Long-term stability of Al2O3 passivated black silicon 

    Calle, Eric; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Martín García, Isidro; Savin, Hele; Alcubilla González, Ramón (Elsevier, 2016)
    Conference lecture
    Restricted access - publisher's policy
    In this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with ...