Now showing items 1-7 of 7

  • Heterojunction diodes and solar cells fabricated by sputtering of GaAs on single crystalline Si 

    Silvestre Bergés, Santiago; Boronat Moreiro, Alfredo (2015-04-23)
    Article
    Open Access
    This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: ...
  • HIT intermediate-band solar cells with self-assembled colloidal quantum dots and metal nanoparticles 

    Tobias, Ignacio; Mendes, Manuel; Boronat Moreiro, Alfredo; Lopez, Ester; garcia linares, pablo; Artacho, Irene; Martí, Antonio; Silvestre Bergés, Santiago; Luque, Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference lecture
    Restricted access - publisher's policy
    The particular opto-electronic properties of chemically synthesized colloidal nanoparticles can be promising for functional materials, as those required for high efficient photovoltaic (PV) devices. In particular, ...
  • Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering 

    Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Castañer Muñoz, Luis María (Institute of Electrical and Electronics Engineers (IEEE), 2013)
    Conference report
    Restricted access - publisher's policy
    In the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the ...
  • Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process 

    Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Orpella García, Alberto (2013-09-12)
    Article
    Open Access
    A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing ...
  • Optical measurements on GaAs(Ti) thin films sputtered on GaAs 

    Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Castañer Muñoz, Luis María (2011)
    Conference report
    Restricted access - publisher's policy
    Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of ...
  • Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells 

    Silvestre Bergés, Santiago; Boronat Moreiro, Alfredo; Colina Brito, Mónica Alejandra; Castañer Muñoz, Luis María; Olea, Javier; Pastor, David; DelPrado, A.; Martil, Ignacio; Gonzalez Diaz, German; Luque, Antonio; Antolin, Elisa; Hernandez, Estela; Ramiro, Iñigo; Artacho, Irene; López, Esther; Martí, Antonio (2013-11)
    Article
    Restricted access - publisher's policy
    In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The ...
  • Tecnología de fabricación de células solares con materiales candidatos a presentar banda intermedia 

    Boronat Moreiro, Alfredo (Universitat Politècnica de Catalunya, 2013-10-11)
    Doctoral thesis
    Open Access
    This work has been developed in a line of research related whit the Intermediate Band (IB) concept, which explores overcoming the photovoltaic efficiency limits established for solar cells. The IB concept implies two issues: ...