Now showing items 1-14 of 14

  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Article
    Open Access
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

    Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
    Article
    Restricted access - publisher's policy
    Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

    Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
    Article
    Restricted access - publisher's policy
    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
  • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Blanqué, Servane; Ibarz, D; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (2009-03)
    Article
    Restricted access - publisher's policy
    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Article
    Restricted access - publisher's policy
    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells 

    Nguyen, Hieu Trung; Ros Costals, Eloi; Bertomeu Balaguero, Joan; Asensi López, José Miguel; Andreu Batallé, Jordi; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Garin Escriva, Moises; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Tom, Thomas (2018-11-05)
    Article
    Open Access
    Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal ...
  • Intermediate amorphous silicon layer for crystalline silicon passivation with alumina 

    García Valenzuela, J. A.; Caballero Lorenzo, Álvaro; Asensi, J.M.; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG, 2015)
    Conference report
    Restricted access - publisher's policy
    The passivation of silicon surfaces is required to reach high-efficiency with most of modern solar cell device structures. It has been demonstrated that the deposition of charged dielectric layers such a-SiNx:H or Al2O3 ...
  • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P (2008-08)
    Article
    Open Access
    The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature ...
  • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
    Article
    Restricted access - publisher's policy
    Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...
  • Optoelectronic properties of CuPc thin films deposited at different substrate temperatures 

    Pirriera, Della M; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Stella, M; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (Institute of Physics (IOP), 2009-07)
    Article
    Restricted access - publisher's policy
    Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, ...
  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P (2008-01)
    Article
    Restricted access - publisher's policy
    In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous ...
  • Stability of hidrogenated nanocrystalline silicon thin-film transistors 

    Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-09)
    Article
    Restricted access - publisher's policy
    Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ...
  • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

    Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
    Article
    Restricted access - publisher's policy
    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
  • Thin film transistors obtained by hot wire CVD 

    Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
    Article
    Restricted access - publisher's policy
    Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...