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    • Bipolar transistor vertical vertical scaling framework 

      Castañer Muñoz, Luis María; Alcubilla González, Ramón; Benavent, A (1994-12)
      Restricted access - publisher's policy
      Scaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ...