Now showing items 1-4 of 4

    • A new approach to modelling the impact of EMI on MOSFET DC behavior 

      Fernández García, Raúl; Gil Galí, Ignacio; Boyer, A.; BenDhia, S.; Vrignon, Bertrand (2011-12-12)
      Article
      Open Access
      A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance ...
    • An alternative approach to model the internal activity of integrated circuits. 

      Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, Binhong; BenDhia, S.; Boyer, A. (2012)
      Conference report
      Open Access
      This paper deals with the EMC modeling of integrated circuits and the standardized model IEC 62433-2 (Integrated Circuit Emission Model – Conducted Emission [1]). This standardized model has been applied into a basic digital ...
    • Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout 

      Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, B.; Boyer, A.; BenDhia, S. (2011-09-16)
      Article
      Open Access
      In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under ...
    • Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences 

      Li, Binhong; Berbel Artal, Néstor; Boyer, A.; BenDhia, S.; Fernández García, Raúl (2011)
      Conference report
      Open Access
      This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of ...