Browsing by Author "BenDhia, S."
Fernández García, Raúl; Gil Galí, Ignacio; Boyer, A.; BenDhia, S.; Vrignon, Bertrand (2011-12-12)
Open AccessA simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance ...
Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, Binhong; BenDhia, S.; Boyer, A. (2012)
Open AccessThis paper deals with the EMC modeling of integrated circuits and the standardized model IEC 62433-2 (Integrated Circuit Emission Model – Conducted Emission ). This standardized model has been applied into a basic digital ...
Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, B.; Boyer, A.; BenDhia, S. (2011-09-16)
Open AccessIn this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under ...
Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences Li, Binhong; Berbel Artal, Néstor; Boyer, A.; BenDhia, S.; Fernández García, Raúl (2011)
Open AccessThis paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of ...