Now showing items 1-5 of 5

    • 20/30 GHz front-end for the TMS-7 receiving station of the OLYMPUS satellite 

      Artal, E; Bará, J; Berenguer Sau, Jordi; Comerón Tejero, Adolfo; Corbella Sanahuja, Ignasi; Pradell i Cara, Lluís (1989)
      Conference report
      Open Access
      The authors present the 20/30-GHz front-end of the TMS-7 station for performing the measurement of the flux density of one or more signal carriers received from the OLYMPUS satellite. The front-end is composed of two ...
    • Amplificadores multietapa de bajo en las bandas de 20 y 30ghz 

      Artal, E; Corbella Sanahuja, Ignasi; Busquets, C; Pradell i Cara, Lluís (1989)
      Conference report
      Open Access
      Microstrip coupled lines technology has been used to design and built low noise amplifiers in 20 and 30 GHz bands. Active devices are GaAs MESFET and HEMT in chip form. The amplifiers have input and output waveguide ...
    • Caracterización de transistores de Microoendas mediante la técnica de Calibrción TRL 

      Pradell i Cara, Lluís; Sabater, C; Artal, E; Comerón Tejero, Adolfo; Corbella Sanahuja, Ignasi (-, 1989)
      Conference report
      Open Access
    • Multiplicadores de frecuencia para receptores coherentes de microondas 

      Corbella Sanahuja, Ignasi; Berenguer Sau, Jordi; Pradell i Cara, Lluís; Comerón Tejero, Adolfo; Bará, J; Artal, E (1986)
      Conference report
      Open Access
      The design of frequency multipliers using PLL techniques is presented in this article. The theory is dicussed and also experimental results of a x43 frequency multiplier with an output frequency of 11.4 GHz in wich excellent ...
    • S-parameter measurement of chip Ga As FETs up to 22 GHz using the TRL calibration technique 

      Pradell i Cara, Lluís; Artal, E; Sabater, C (Institute of Electrical and Electronics Engineers (IEEE), 1989)
      Conference report
      Open Access
      In this paper, the design of a Microstrip Test Fixture for TRL calibration is described. Experimental results for S-parameters measurement of a GaAs FET chip in the 3-22 GHz frequency range are presented. Repeatability of ...