Now showing items 1-15 of 15

  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Article
    Open Access
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

    Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
    Article
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    Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...
  • Characterization of bifacial heterojunction Silicon solar cells obtained by Hot-Wire CVD 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Fonrodona, Marta; Garin Escriva, Moises; Orpella García, Alberto; Vetter, Michael; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertoeu, J; Andreu Batallé, Jordi (2006-07)
    Article
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    In this work, we study bifacial heterojunction silicon solar cells fabricated by hot-wire CVD on both p- and n-type crystalline silicon substrates. In these devices, hydrogenated microcrystalline silicon doped layers are ...
  • Copper phthalocyanine thin filma transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Fonrodona, Marta; Cheylan, Stephanie; Stella, M; Andreu Batallé, Jordi; Vetter, Michael; Alcubilla González, Ramón (2006-06)
    Article
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    Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films ...
  • Electronic properties of intrinsic and doped amorphous silicon carbide films 

    Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
    Article
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    Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Article
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    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells 

    Nguyen, Hieu Trung; Ros Costals, Eloi; Bertomeu Balaguero, Joan; Asensi López, José Miguel; Andreu Batallé, Jordi; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Garin Escriva, Moises; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Tom, Thomas (2018-11-05)
    Article
    Open Access
    Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal ...
  • Intermediate amorphous silicon layer for crystalline silicon passivation with alumina 

    García Valenzuela, J. A.; Caballero Lorenzo, Álvaro; Asensi, J.M.; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG, 2015)
    Conference report
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    The passivation of silicon surfaces is required to reach high-efficiency with most of modern solar cell device structures. It has been demonstrated that the deposition of charged dielectric layers such a-SiNx:H or Al2O3 ...
  • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P (2008-08)
    Article
    Open Access
    The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature ...
  • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
    Article
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    Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...
  • Photodiodes based on fullerene semiconductor 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cheylan, Stephanie; Fonrodona, A; Stella, M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2007-07)
    Article
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    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal ...
  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P (2008-01)
    Article
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    In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous ...
  • Stability of hidrogenated nanocrystalline silicon thin-film transistors 

    Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-09)
    Article
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    Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over ...
  • Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films 

    Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Vetter, Michael; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2003-05)
    Article
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    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination ...
  • Thin film transistors obtained by hot wire CVD 

    Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
    Article
    Restricted access - publisher's policy
    Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...