Now showing items 1-5 of 5

    • 1-D memristor networks as ternary storage cells 

      Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Conference report
      Restricted access - publisher's policy
      Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great ...
    • Experimental study of artificial neural networks using a digital memristor simulator 

      Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
      Article
      Open Access
      This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...
    • Exploring the voltage divider approach for accurate memristor state tuning 

      Vourkas, Ioannis; Gomez, Jorge; Abusleme, Angel; Vasileiadis, Nikolaos; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage ...
    • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

      Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
      Article
      Open Access
      Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
    • Voltage divider for self-limited analog state programing of memristors 

      Gomez, Jorge; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2019-06-19)
      Article
      Open Access
      Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory ...