Now showing items 1-3 of 3

  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Article
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    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Thin film transistors obtained by hot wire CVD 

    Puigdollers i González, Joaquim; Orpella García, Alberto; Dosev, D; Voz Sánchez, Cristóbal; Peiró, D; Pallarés, J; Marsal, L F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2000-05)
    Article
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    Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) ...
  • Thin-film transistors with polymorphous silicon active layer 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
    Article
    Restricted access - publisher's policy
    Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...