Exploració per tema "I-V-T measurements"
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Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer
(2018-02-01)
Article
Accés obertTemperature dependent current–voltage (I¿V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and ...