• Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
    • Thin-film transistors with polymorphous silicon active layer 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Orpella García, Alberto; Alcubilla González, Ramón; Fontcuberta Morral, Anna; Tripathi, V; Roca, P (2002-04)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...