Exploració per tema "C185"
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Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD
(2002-04)
Article
Accés restringit per política de l'editorialHydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ... -
Thin-film transistors with polymorphous silicon active layer
(2002-04)
Article
Accés restringit per política de l'editorialHydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers ...