Exploració per tema "p-type crystalline silicon surface"
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Improvement of crystalline silicon surface passivation by hidrogen plasma treatment
(American Institute of Physics, 2004-03-01)
Article
Accés restringit per política de l'editorialA completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...