Exploració per autor "von Gastrow, Guillaume"
Ara es mostren els items 1-7 de 7
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2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells
Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
Comunicació de congrés
Accés obertBlack silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ... -
Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon
von Gastrow, Guillaume; Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Yli-Koski, Marko; Conesa-Boj, Sònia; Fontcuberta i Morral, Anna; Savin, Hele (2015-11)
Article
Accés obertWe demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination ... -
Black silicon back-contact module with wide light acceptance angle
Ortega Villasclaras, Pablo Rafael; Garín, Moisés; von Gastrow, Guillaume; Carrió Díaz, David; Alcubilla González, Ramón (2019-01-01)
Article
Accés obertIn this work, a photovoltaic mini-module combining interdigitated back-contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series ... -
Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency
Savin, Hele; Repo, Päivikki; von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Calle, Eric; Garin Escriva, Moises; Alcubilla González, Ramón (2015-05-18)
Article
Accés obertThe nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might ... -
High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates
Ortega Villasclaras, Pablo Rafael; Calle, Eric; von Gastrow, Guillaume; Repo, Päivikki; Carrió, David; Savin, Hele; Alcubilla, Ramón (2015)
Article
Accés obertThis work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very ... -
Long-term stability of Al2O3 passivated black silicon
Calle, Eric; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Martín García, Isidro; Savin, Hele; Alcubilla González, Ramón (Elsevier, 2016)
Comunicació de congrés
Accés restringit per política de l'editorialIn this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with ... -
Recombination processes in passivated boron-implanted black silicon emitters
von Gastrow, Guillaume; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón; Husein, Sebastian; Nietzold, Tara; Bertoni, Mariana; Savin, Hele (American Institute of Physics (AIP), 2017-05-14)
Article
Accés obertIn this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter ...