• Impact of gate tunnelling leakage on CMOS circuits with full open defects 

      Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Eichenberger, S.; Hora, Camelia; Kruseman, B. (Institution of Electrical Engineers, 2007-10)
      Article
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      Interconnecting lines with full open defects become floating lines. In nanometric CMOS technologies, gate tunnelling leakage currents impact the behaviour of these lines, which cannot be considered electrically isolated ...