Exploració per autor "Kruseman, B."
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Impact of gate tunnelling leakage on CMOS circuits with full open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Eichenberger, S.; Hora, Camelia; Kruseman, B. (Institution of Electrical Engineers, 2007-10)
Article
Accés obertInterconnecting lines with full open defects become floating lines. In nanometric CMOS technologies, gate tunnelling leakage currents impact the behaviour of these lines, which cannot be considered electrically isolated ...