Now showing items 1-4 of 4

  • Cross-layer system reliability assessment framework for hardware faults 

    Vallero, Alessandro; Savino, Alessandro; Politano, Gianfranco; Di Carlo, Stefano; Chatzidimitriou, Athanansios; Tselonis, Sotiris; Kaliorakis, Manolis; Gizipoulos, Dimitris; Riera Villanueva, Marc; Canal Corretger, Ramon; González Colás, Antonio María; Kooli, Maha; Bosio, Alberto; Di Natale, Giorgio (Institute of Electrical and Electronics Engineers (IEEE), 2016)
    Conference report
    Open Access
    System reliability estimation during early design phases facilitates informed decisions for the integration of effective protection mechanisms against different classes of hardware faults. When not all system abstraction ...
  • Defective Behaviour of an 8T SRAM Cell with Open Defects 

    Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto (2010)
    Conference report
    Restricted access - publisher's policy
  • Power-aware voltage tuning for STT-MRAM reliability 

    Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Di Carlo, Stefano; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Restricted access - publisher's policy
    One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. ...
  • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

    Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
    Conference report
    Restricted access - publisher's policy
    In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...