Ara es mostren els items 157449-157468 de 243837

    • (┬,┴,N) Fuzzy logic 

      Xu, Y.; Liu, J.; Ruan, Da (Universitat Politècnica de Catalunya. Secció de Matemàtiques i Informàtica, 2001)
      Article
      Accés obert
      To investigate more reasonable fuzzy reasoning model in expert systems as well as more effective logical circuit in fuzzy control, a $(\top, \bot, N)$ fuzzy logic is proposed in this paper by using $\top$-norm, $\bot$-norm ...
    • (n,cp) reactions study at the n_TOF facilitty at CERN: results for the cosmological lithium problem 

      Barbagallo, Massimo; Aberle, O.; Alcayne, V.; Calviño Tavares, Francisco; Casanovas Hoste, Adrià; Cortés Rossell, Guillem Pere; Tarifeño Saldivia, Ariel Esteban (European Organization for Nuclear Research (CERN), 2019)
      Comunicació de congrés
      Accés obert
      The Big Bang Nucleosynthesis describes the production of the lightest nuclides from deuterium to Li at the early stages of the Universe. While a general good agreement is found for most of the isotopes involved in the ...
    • n-Cyclic Hoist Scheduling Problem to manufacture more than 2 products 

      Mateo Doll, Manuel; Companys Pascual, Ramón (2012-07-27)
      Report de recerca
      Accés obert
      Jobs of more than two products (n>2) must be manufactured in a production line of tanks. A hoist transports the jobs between tanks. If the size of both batches is equal and the number of jobs is high, a cyclic scheduling ...
    • N-doped graphene oxide nanoparticles studied by EPR 

      Tampieri, Francesco; Tommasini, Matteo; Agnoli, Stefano; Favaro, Marco; Barbon, Antonio (2020-01-01)
      Article
      Accés obert
      Realitzat a/amb:   Università degli Studi di Padova / Politecnico di Milano / Institute for Solar Fuels
      Graphene-derived materials attract a great deal of attention because of the peculiar properties that make them suitable for a wide range of applications. Among such materials, nano-sized systems show very interesting ...
    • N-gram-based Machine Translation 

      Mariño Acebal, José Bernardo; Banchs Martínez, Rafael Enrique; Crego Clemente, Josep Maria; Gispert Brosa, Adrian de; Lambert, Patrik; Rodríguez Fonollosa, José Adrián; Ruiz Costa-Jussà, Marta (2006-12)
      Article
      Accés obert
      This article describes in detail an n-gram approach to statistical machine translation. This approach consists of a log-linear combination of a translation model based on n-grams of bilingual units, which are referred to ...
    • N-gram-based statistical machine translation versus syntax augmented machine translation: comparison and system combination 

      Khalilov, Maxim; Rodríguez Fonollosa, José Adrián (2009-03-30)
      Comunicació de congrés
      Accés obert
      In this paper we compare and contrast two approaches to Machine Translation (MT): the CMU-UKA Syntax Augmented Machine Translation system (SAMT) and UPC-TALP N-gram-based Statistical Machine Translation (SMT). SAMT ...
    • N-II: traductor automático estadístico basado en Ngramas 

      Ruiz Costa-Jussà, Marta; Farrus, Mireia; Poch, Marc; Hernández Huerta, Adolfo; Mariño, José B. (2008)
      Text en actes de congrés
      Accés obert
      Esta comunicación describe el desarrollo del traductor estadístico N-II entre catalán y castellano. Para mejorar la calidad del sistema, se llevó a cabo un riguroso análisis lingüístico. Este ha permitido plantear ...
    • N-of-1 clinical trials in nutritional interventions directed at improving cognitive function 

      Soldevila Domènech, Natàlia; Boronat Rigol, Anna; Langohr, Klaus; De la Torre Fornell, Rafael (2019-07-23)
      Article
      Accés obert
      Longer life expectancy has led to an increase in the prevalence of age-related cognitive decline and dementia worldwide. Due to the current lack of effective treatment for these conditions, preventive strategies represent ...
    • N-Plexer and N-Band acoustic filters based on transversal configuration 

      Perea Robles, Rafael; Mateu Mateu, Jordi; Collado Gómez, Juan Carlos (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      This work shows the feasibility of using filters with transversal configuration to create N-Plexers and N-Band responses, by directly connecting several BAW filters in a transversal manner. The new multi-filtering solutions ...
    • N-removal from the Liquid fraction of pig slurry in a lab-scale sequencing batch Reactor considering different operational strategies 

      Magrí Aloy, Albert; Guivernau, Miriam; Prenafeta Boldú, Francesc Xavier; Flotats Ripoll, Xavier (GOVERN DE LES ILLES BALEARS, 2008)
      Comunicació de congrés
      Accés obert
    • N-sided patches with B-spline boundaries 

      Cotrina Navau, Josep; Pla García, Núria; Vigo Anglada, Marc (2001-12)
      Report de recerca
      Accés obert
      We present a method to construct a patch of parametric surface of degree k+1 that fills a n-sided hole, with bigger than 2, and whose boundary coincides with a B-Spline, thus, the resulting patch can be easily connected ...
    • N-type bismuth sulfide coloidal nanocrystals and their application to solution-processed photovoltaic devices 

      Martínez Montblanch, Luis (Universitat Politècnica de Catalunya, 2014-10-31)
      Tesi
      Accés obert
      Durante las últimas décadas, la energía solar fotovoltaica se ha convertido en una tecnología de creciente importancia para satisfacer las necesidades energéticas actuales sin sacrificar las futuras generaciones. Las células ...
    • N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices 

      Jiménez Pagán, Alba; Napolitani, Enrico; Datas Medina, Alejandro; Martín García, Isidro; López Rodríguez, Gema; Cabrero Piris, Mariona; Sgarbossa, Francesco; Milazzo, Ruggero; Carturan, Sara Maria; De Salvador, Davide; López García, Iñaki; Ryu, Yu Kyoung; Martinez Rodrigo, Javier; del Cañizo Nadal, Carlos (2022-01-01)
      Article
      Accés obert
      In this article, a method for phosphorous (n-type) doping of germanium based on spin-on dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide (a-SixC1-x:H) layer, which provides both surface ...
    • N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I; Alcubilla González, Ramón (American Institute of Physics (AIP), 2006-10)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus ...
    • n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...
    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Text en actes de congrés
      Accés obert
      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...
    • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature 

      Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2009-10)
      Article
      Accés restringit per política de l'editorial
      N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...
    • N.M. Rubió i Tudurí: una polémica refutación de la arquitectura moderna 

      Pizza de Nanno, Antonio (Escola Tècnica Superior d'Arquitectura de Barcelona, 1993)
      Article
      Accés obert
    • N.MIX. Newport/New Jersey 

      Pérez Martín, Beatriz (Universitat Politècnica de Catalunya, 2006-01)
      Projecte/Treball Final de Carrera
      Accés obert
    • N2 - Ride & Park 

      Crosas Armengol, Carles; Solà Font, Joan; Julià Sort, Jordi; Vives de Delàs, Roser; Castillo Figueruela, Pablo; Codorniu Miret, Martí (2022)
      Article
      Accés obert