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    • Crystalline silicon solar cells beyond 20% efficiency 

      Alcubilla González, Ramón; García Molina, Francisco Miguel; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Orpella García, Alberto; Martín García, Isidro; Colina, M.; Voz Sánchez, Cristóbal; Bermejo Broto, Sandra; Puigdollers i González, Joaquim (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Text en actes de congrés
      Accés obert
      —This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ...

    • Crystalline silicon surface passivation by amorphous silicon carbide films 

      Vetter, Michael; Martín García, Isidro; Ferré Tomas, Rafel; Garin Escriva, Moises; Alcubilla González, Ramón (2006-10)
      Article
      Accés restringit per política de l'editorial
      This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ...

    • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

      Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
      Article
      Accés restringit per política de l'editorial
      Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...

    • Density-of-states in pentacene from the electrical characteristics of thin-film transistors 

      Puigdollers i González, Joaquim; Marsal Vinade, Albert; Cheylan, Stephaie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-08)
      Article
      Accés restringit per política de l'editorial
      In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...

    • Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures 

      Muñoz Cervantes, Delfina; Desrues, T.; Ribeyron, P.J.; Orpella García, Alberto; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-04)
      Article
      Accés restringit per política de l'editorial
      In this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ...

    • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Blanqué, Servane; Ibarz, D; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (2009-03)
      Article
      Accés restringit per política de l'editorial
      In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...

    • Development of microstructured zeolite films as highly accessible catalytic coatings for microreactors 

      Urbiztondo Castro, Miguel Ángel; Valera Cano, Enrique Andrés; Todorov Trifonov, Trifon; Alcubilla González, Ramón; Irusta Alderete, Silvia; Pina Iritia, María Pilar; Rodríguez Martínez, Ángel; Santamaria Ramiro, Jesus (2007-08-15)
      Article
      Accés restringit per política de l'editorial
      Regular structures of SiO2 microneedles and Si micromonoliths have been formed using processing methods similar to those used in the microelectronics field; then these structures have been used as supports for zeolite ...

    • Diseño digital : una perspectiva VLSI-CMOS 

      Alcubilla González, Ramón; Pons Nin, Joan; Bardés Llorensí, Daniel (Edicions UPC, 1996)
      Llibre
      Accés restringit a la comunitat UPC
      El presente texto aporta el material necesario para un curso introductorio de Electrónica Digital. Incluye los conceptos fundamentales de diseño clásico de circuitos lógicos combinacionales y secuenciales. Adicionalmente ...

    • Distribution of recombination currents in the space charge of heterostructure bipolar devices 

      Pallares, J; Marsal, L F; Correig, X; Calderer Cardona, Josep; Alcubilla González, Ramón (1998-01)
      Article
      Accés obert
      This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The ...

    • DopLa solar cells with texturized front surface 

      Martín García, Isidro; Coll Valentí, Arnau; López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Alcubilla González, Ramón (Elsevier, 2016)
      Text en actes de congrés
      Accés obert
      In this work, we report on improving efficiency of DopLa cells fabricated on p-type substrates. This type of solar cells has all the highly-doped regions based on laser doping from dielectric films resulting in a very ...

    • DopLaCell: a new c-Si solar cell based on laser processing of dielectric films 

      Martín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ...

    • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface 

      Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón (American Institute of Physics, 2005-11-09)
      Article
      Accés restringit per política de l'editorial
      Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...

    • Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy 

      Garcia Belmonte, G; García Cañadas, J; Mora-Seró, I; Bisquert, J; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      By combining information on solar cell layer structure and electrical response analyzed by impedance spectroscopy, relevant knowledge is obtained about photogenerated carriers recombination and extraction. The inclusion ...

    • Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon 

      Roige, Abel; Alvarez, J.; Jaffre, A.; Desrues, T.; Martín García, Isidro; Alcubilla González, Ramón; Kleider, J.P. (American Institute of Physics (AIP), 2017-02-14)
      Article
      Accés obert
      Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive ...

    • Effects of symmetry reduction in two-dimensional square and triangular lattices 

      Todorov Trifonov, Trifon; Marsal, L F; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      We investigate the absolute photonic band gap (PBG) formation in two-dimensional (2-D) photonic crystals designed using symmetry reduction approach. The lattice symmetry, shape and orientation of dielectric scatterers ...

    • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...

    • Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions 

      Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-08)
      Article
      Accés restringit per política de l'editorial
      Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier ...

    • Electron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells 

      Zafoschnig, Lisa; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Masmitjà Rusiñol, Gerard; López Rodríguez, Gema; Alcubilla González, Ramón (2018)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      In the last years, our research group has focused on the development of Interdigitated Back Contacted (IBC) solar cells based on transition metal oxides. In particular, a very thin Al2O3/TiO2 stack deposited by ALD has ...

    • Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties 

      Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jerome; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Fontrodona, Xavier; Mas Torrent, Marta; Veciana Miró, Jaume; Rovira Angulo, Concepció (2011)
      Article
      Accés restringit per política de l'editorial
      We report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, ...

    • Electronic properties of intrinsic and doped amorphous silicon carbide films 

      Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
      Article
      Accés restringit per política de l'editorial
      Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...