Exploració per tema "Silicon"
Ara es mostren els items 21-40 de 95
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Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
(American Institute of Physics, 2005-11-09)
Article
Accés restringit per política de l'editorialSurface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ... -
Effect of liquid aluminium alloy and ultrasound to corrosion resistance of PVD coating
(Universitat Politècnica de Catalunya, 2017-01)
Projecte Final de Màster Oficial
Accés restringit per decisió de l'autor
Realitzat a/amb: Università degli Studi di BresciaThe aim of the project is resolve the corrosion problems of a steel bar, coating them and study if the coating affects the vibration needed to delate the dendrites of the aluminium alloy due to obtain a globular structure. ... -
Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters
(Institute of Electrical and Electronics Engineers (IEEE), 2019)
Comunicació de congrés
Accés obertPower devices based on wide band-gap materials are emerging as alternatives to silicon-based devices. These new devices allow designing and building converters with fewer power losses, and are thus more highly efficient ... -
Estudio de técnicas de metalización para la fabricación de células solares
(Universitat Politècnica de Catalunya, 2016-06)
Treball Final de Grau
Accés obertThis work is part of two large projects carried out by two researchers from the Polytechnic University of Catalonia, which aim to manufacture Interdigitated Back-Contact silicon solar cells (IBCs) using processes at low ... -
Estudio reológico de diferentes rutas de formación de geles y sus condiciones
(Universitat Politècnica de Catalunya, 2024-02-01)
Projecte Final de Màster Oficial
Accés restringit per acord de confidencialitat
Realitzat a/amb: Zobele EspañaAquest projecte té com a objectiu realitzar un estudi reològic dels gels formats amb sílice pirògena, especialment en el context d'aplicacions de difusió de substàncies volàtils. S'han examinat diverses formulacions amb ... -
Expanding the perspective of polymeric selective contacts in photovoltaic devices using branched polyethylenimine
(American Chemical Society (ACS), 2022-09-05)
Article
Accés obertThis work studies the use of polymeric layers of polyethylenimine (PEI) as an interface modification of electron-selective contacts. A clearly enhanced electrical transport with lower contact resistance and significant ... -
Experimental and theoretical study of second and third harmonic generation in amorphous silicon
(International Society for Photo-Optical Instrumentation Engineers (SPIE), 2022)
Text en actes de congrés
Accés restringit per política de l'editorialWe report contrasted experimental and theoretical results on second and third harmonic generation from an amorphous silicon nanolayer. We perform this study by analysing the harmonic optical signals generated when fs and ... -
Fabricacion y caracterizacion de guias opticas integradas sobre sustratos de silicio
(1991)
Text en actes de congrés
Accés obertSilicon nitride (Si 3 N4 ) planar optical waveguides have been successfully grown by lowpressure chemical vapor deposition (LPCVD). Silicon p-type wafers with a (100) orientation were used as substrates, and the Si3 N4 was ... -
Fabricación de un sensor solar de alta precisión en dos ejes para el satélite SeoSat
(Universitat Politècnica de Catalunya, 2011-09-06)
Projecte/Treball Final de Carrera
Accés obertEnglish: The goal of this project is the fabrication of a two axis sun sensor for the attitude control of the SeoSat satellite. This sensor should detect the position of the sun with high accuracy and at an angle FOV (Field ... -
Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors
(2000-09)
Article
Accés restringit per política de l'editorialSilicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ... -
Fabrication of c-Si microstructures through reorganization at high temperatures
(Universitat Politècnica de Catalunya, 2015-06)
Treball Final de Grau
Accés obertSilicon photonics has gained increasing interest in recent years as it promises high performance, cost-effective integrated optical devices. The advent of Si fabrication techniques at the micro and nano-scales, in conjunction ... -
First use of macroporous silicon loaded with catalyst film for a chemical reaction: a microreformer for producing hydrogen from ethanol steam reforming
(2008-04-25)
Article
Accés restringit per política de l'editorialMacroporous silicon with millions of parallel microchannels per square centimeter can be used as a micromonolithic support for high-speed catalysis in miniaturized systems, opening a new and exciting field of research and ... -
Frequency characterization of a 2.4 GHz CMOS LNA by Thermal Measurements
(Institute of Electrical and Electronics Engineers (IEEE), 2006)
Text en actes de congrés
Accés obertThis paper presents a technique to obtain electrical characteristics of analog and RF circuits, based on measuring temperature at the silicon surface close to the circuit under test. Experimental results validate the ... -
Functionalization of silicon carbide by magnetic nanoparticles for tracer uses
(Universitat Politècnica de Catalunya / Université de Technologie Compiègne, 2017-06)
Projecte Final de Màster Oficial
Accés obertThe present work reports a novel and simple way to functionalize commercial silicon carbide with magnetic nanoparticles (Fe3O4). Maghemite and magnetite nanoparticles were synthesized by chemical coprecipitation of FeCl3·6H2O ... -
Hole transport layers based on ALD V2O5 for silicon solar cells
(Universitat Politècnica de Catalunya, 2018-06)
Treball Final de Grau
Accés obertThis report summarises research on the use of vanadium (V) oxide films deposited by Atomic Layer Deposition (ALD) for a hole transport layer. Films of vanadium (V) oxide are investigated by looking at their passivation and ... -
Implementation of a 5x5 trits multiplier in a quasi-adiabatic ternary CMOS logic
(Institute of Electrical and Electronics Engineers (IEEE), 1997)
Text en actes de congrés
Accés obertAdiabatic switching is one technique to design low power digital IC. In order to diminish its expensive silicon area requirements an adiabatic ternary logic is proposed. A 5×5 trits (ternary signals) multiplier has been ... -
Improved thermal isolation of silicon suspended platforms for an all-silicon thermoelectric microgenerator based on large scale integration of Si nanowires as thermoelectric material
(2015-12-10)
Article
Accés obertSpecial suspended micro-platforms have been designed as a part of silicon compatible planar thermoelectric microgenerators. Bottom-up grown silicon nanowires are going to bridge in the future such platforms to the surrounding ... -
Improving selective thermal emission properties of three-dimensional macroporous silicon through porosity tuning
(American Institute of Physics, 2008-08-27)
Article
Accés restringit per política de l'editorialWe present a theoretical and experimental study on the effect of progressive porosity increase, through multiple oxidation/oxide removal steps, upon the optical characteristics in threedimensional macroporous silicon. ... -
Influence of a gold seed in transparent V2Ox/Ag/V2Ox selective contacts for dopant-free silicon solar cells
(2018-11-05)
Article
Accés obertDielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a tradeoff in the metal ... -
Influence of co-sputtered Ag:Al ultra-thin layers in transparent V2O5/Ag:Al/AZO hole-selective electrodes for silicon solar cells
(Multidisciplinary Digital Publishing Institute (MDPI), 2020-10-31)
Article
Accés obertAs optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific ...