Now showing items 21-37 of 37

    • Postbond test of through-silicon vias with resistive open defects 

      Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan (2019-07-17)
      Article
      Open Access
      Through-silicon vias (TSVs) technology has attracted industry interest as a way to achieve high bandwidth, and short interconnect delays in nanometer three-dimensional integrated circuits (3-D ICs). However, TSVs are ...
    • Power-aware voltage tuning for STT-MRAM reliability 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Di Carlo, Stefano; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Restricted access - publisher's policy
      One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. ...
    • Prebond testing of weak defects in TSVs 

      Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (2015-08-07)
      Article
      Restricted access - publisher's policy
      Through-silicon vias (TSVs) are critical elements in 3-D integrated circuits susceptible to defects during fabrication and lifetime. It is desirable to detect defective TSVs in the early steps of the fabrication process ...
    • Random masking interleaved scrambling technique as a countermeasure for DPA/DEMA attacks in cache memories 

      Neagu, Mădălin; Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador (2016-11-15)
      Conference report
      Open Access
      Memory remanence in SRAMs and DRAMs is usually exploited through cold-boot attacks and the targets are the main memory and the L2 cache memory. Hence, a sudden power shutdown may give an attacker the opportunity to ...
    • Read/write robustness estimation metrics for spin transfer torque (STT) MRAM cell 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Indaco, Marco; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Restricted access - publisher's policy
      The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin- Transfer-Torque ...
    • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

      Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Restricted access - publisher's policy
      In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...
    • Resistive open defect characteritzation in 3D 6T SRAM memories 

      Castillo, Raúl; Arumi Delgado, Daniel; Rodríguez Montañés, Rosa (2014)
      Conference report
      Restricted access - publisher's policy
      The relentless decrease in feature size and the increase of density requirements in Integrated Circuit (IC) manufacturing arise new challenges that must be overcome. One of the most promising alternatives is three-dimensional ...
    • RRAM based cell for hardware security applications 

      Arumi Delgado, Daniel; Manich Bou, Salvador; Rodríguez Montañés, Rosa (2016)
      Conference report
      Restricted access - publisher's policy
      Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end processes. ...
    • RRAM Based Random Bit Generation for Hardware Security Applications 

      Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Manich Bou, Salvador; Pehl, Michael (Institute of Electrical and Electronics Engineers (IEEE), 2016)
      Conference report
      Open Access
      Resistive random access memories (RRAMs) have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end ...
    • RRAM random number generator based on train of pulses 

      Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-30)
      Article
      Open Access
      In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude ...
    • Serial RRAM cell for secure bit concealing 

      Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-31)
      Article
      Open Access
      Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic ...
    • Simulation of serial RRAM cell based on a Verilog-A compact model 

      Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bautista Roldan, Juan; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (Institute of Electrical and Electronics Engineers (IEEE), 2021)
      Conference report
      Restricted access - publisher's policy
      Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle for the massive commercial implementation of the resistive ...
    • STT-MRAM cell reliability evaluation under process, voltage and temperature (PVT) variations 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Indaco, Marco; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Restricted access - publisher's policy
      The CMOS based memories are facing major issues with technology scaling, such as decreased reliability and increased leakage power. A point will be reached when the technology scaling issues will overweight the benefits. ...
    • Test escapes of stuck-open faults caused by parasitic capacitances and leakage currents 

      Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras, Joan (2015-09-24)
      Article
      Open Access
      Intragate open defects are responsible for a significant percentage of defects in present technologies. A majority of these defects causes the logic gate to become stuck open, and this is why they are traditionally modeled ...
    • The low area probing detector as a countermeasure against invasive attacks 

      Weiner, Michael; Manich Bou, Salvador; Rodríguez Montañés, Rosa; Sigl, Georg (2017-11-07)
      Article
      Open Access
      Microprobing allows intercepting data from on-chip wires as well as injecting faults into data or control lines. This makes it a commonly used attack technique against security-related semiconductors, such as smart card ...
    • Una propuesta de evaluación de competencias genéricas en grados de Ingeniería 

      Martínez Martínez, María del Rosario; Amante García, Beatriz; Cadenato Matia, Ana María; Rodríguez Montañés, Rosa (Red Estatal de Docencia Universitaria, 2013-10-01)
      Article
      Open Access
      In genetic association studies, tests for Hardy-Weinberg proportions are often employed as a quality control checking procedure. Missing genotypes are typically discarded prior to testing. In this paper we show that inference ...
    • Unpredictable bits generation based on RRAM parallel configuration 

      Arumi Delgado, Daniel; Gómez Pau, Álvaro; Manich Bou, Salvador; Rodríguez Montañés, Rosa; Bargalló, Mireia; Campabadal, Francesca (2018-12-12)
      Article
      Open Access
      In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access memory (RRAM) devices is studied for the generation of unpredictable bits. Measurements confirm that a simultaneous parallel ...