Now showing items 21-40 of 98

  • Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition 

    Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (American Institute of Physics (AIP), 2005-12)
    Article
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    Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ...
  • Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode 

    Mahato, Somnath; Voz Sánchez, Cristóbal; Biswas, Debaleen; Puigdollers i González, Joaquim; Bhunia, Satyaban (Institute of Physics (IOP), 2018-12-07)
    Article
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    Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport ...
  • Degradation study and calculation of density-of-states in PTCDI-C8 channel layer from the electrical characteristics of thin-film transistors 

    Shijeesh, Methattel R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers i González, Joaquim (American Institute of Physics (AIP), 2014-07-14)
    Article
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    N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal vapour deposition using N,N'-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as an n-channel layer on Si/SiO2 substrate. ...
  • Density-of-states in pentacene from the electrical characteristics of thin-film transistors 

    Puigdollers i González, Joaquim; Marsal Vinade, Albert; Cheylan, Stephaie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-08)
    Article
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    In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...
  • Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy 

    Garcia Belmonte, G; García Cañadas, J; Mora-Seró, I; Bisquert, J; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2006-07)
    Article
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    By combining information on solar cell layer structure and electrical response analyzed by impedance spectroscopy, relevant knowledge is obtained about photogenerated carriers recombination and extraction. The inclusion ...
  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
    Article
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    Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...
  • Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties 

    Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jerome; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Fontrodona, Xavier; Mas Torrent, Marta; Veciana Miró, Jaume; Rovira Angulo, Concepció (2011)
    Article
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    We report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, ...
  • Electronic properties of intrinsic and doped amorphous silicon carbide films 

    Vetter, Michael; Voz Sánchez, Cristóbal; Ferré Tomas, Rafel; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Andreu Batallé, Jordi; Alcubilla González, Ramón (2006-07)
    Article
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    Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ...
  • Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Soler Vilamitjana, David; Fonrodona, Marta; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2002-04)
    Article
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    Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ...
  • Enantiomer-selective molecular sensing using racemic nanoplasmonic arrays 

    García Guirado, José; Svedendahl, Mikael; Puigdollers i González, Joaquim; Quidant, Romain (2018-09-19)
    Article
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    Building blocks of life show well-defined chiral symmetry which has a direct influence on their properties and role in Nature. Chiral molecules are typically characterized by optical techniques such as circular dichroism ...
  • Ephocell project: smart light collecting system for the efficiency enhancement of solar cells - ray trace modeling of system 

    Aubouy, Laurent; Gutiérrez-Tauste, D.; Della Pirriera, Monica; Noriega, G.; Di Lorenzo, M.L.; Avella, M.; Errico, M.E.; Gentile, G.; Kennedy, M.; Doran, J.; Norton, B.; Ahmed, H.; Baluschev, S.; Bistué Guardiola, J.; Hervera, F.; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Daren, S.; Solomon-Tsvetkov, F.; Pashov, A. (2012)
    Conference lecture
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    PV cell efficiency is limited partly due to the spectral mismatch between the solar spectrum and the PV absorption properties. PV conversion efficiency is enhanced by external modulation of the incident irradiance, by means ...
  • Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor 

    Moreno Sierra, César; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers i González, Joaquim; Bromley, Stephan; Rovira, Concepció; Alcubilla González, Ramón; Veciana, Jaume (2011-11-16)
    Article
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    Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) ...
  • Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis 

    Orpella García, Alberto; Martín García, Isidro; López González, Juan Miguel; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2015-10)
    Article
    Open Access
    One of the most common strategies in high-efficiency crystalline silicon (c-Si) solar cells for the rear surface is the combination of a dielectric passivation with a point-like contact to the base. In such devices, the ...
  • Experimental observation of oxygen-related defect state in pentacene thin films 

    Nadaždy, Vojtech; Durný, Rudolf; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Gmucová, K. (American Institute of Physics, 2007-02-28)
    Article
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    The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed ...
  • Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors 

    Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers i González, Joaquim (2015-07-01)
    Article
    Open Access
    Bottom-contact p-type small-molecule copper phthalocyanine (CuPc) thin film transistors (TFTs) with different channel lengths have been fabricated by thermal evaporation. The influence of the channel length on the ...
  • Fabrication and characterization of in-situ doped a-Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Puigdollers i González, Joaquim; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (2000-09)
    Article
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    Silicon–carbon emitters were deposited by plasma enhanced chemical vapour deposition (PECVD) on a conventional silicon transistor base. The resulting transistors were annealed after the emitter had been deposited which led ...
  • Fabrication of cost-effective, highly reproducible large area arrays of nanotriangular pillars for surface enhanced Raman scattering substrates 

    Hasna, Kudilatt; Antony, Aldrin; Puigdollers i González, Joaquim; Kumar, Kumaran Rajeev; Jayaraj, M. K. (2016-10-14)
    Article
    Open Access
    Development of cost-effective, highly reproducible non-conventional fabrication techniques for anisotropic metal nanostructures is essential to realizing potential applications of plasmonic devices, photonic devices, and ...
  • Fullerene thin-film transistors fabricated on polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Orpella García, Alberto; Vetter, M; Alcubilla González, Ramón (2007-07)
    Article
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    Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant ...
  • High efficiency interdigitated back-contact c-Si solar cells 

    Calle Martín, Eric; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Martín García, Isidro; Carrió Díaz, David; Voz Sánchez, Cristóbal; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Open Access
    In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with ...
  • High efficiency ITO-free hybrid solar cell using highly conductive PEDOT:PSS with co-solvent and surfactant treatments 

    Mahato, Somnath; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2016-10-15)
    Article
    Open Access
    Hybrid organic/inorganic heterojunction solar cells were fabricated based on polished n-type crystalline silicon (c-Si) and p-type transparent conducting polymer poly(3,4-ethylenedioxythiophene):polystyrenesulfonate ...