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Browsing by Author "Martín García, Isidro"
Now showing items 21-40 of 123
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“Cold” process for IBC c-Si solar cells fabrication
(Elsevier, 2016)
Conference lecture
Open Access -
Crystalline silicon solar cells beyond 20% efficiency
(IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
Conference report
Open Access—This paper describes a fabrication process to obtain high efficiency c-Si cells (> 20%) based on the Laser Fired Contact Passivated Emitter Rear Cell (LFC-PERC) concept. Photovoltaic efficiencies beyond 20% have ... -
Crystalline silicon surface passivation by amorphous silicon carbide films
(2006-10)
Article
Restricted access - publisher's policyThis article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited ... -
Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition
(American Institute of Physics (AIP), 2005-12)
Article
Restricted access - publisher's policySurface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been ... -
Development of LASER fired contacts on silicon heterojunction solar cells for the application to rear contact structures
(2010-04)
Article
Restricted access - publisher's policyIn this work, we present our progress in contacting both doped and undoped a-Si:H layers using a LASER tool and show some applications for three different HJ solar cell designs: standard (p-type), rear emitter (n-type) and ... -
Direct etching at the nanoscale through nanoparticle-directed capillary condensation
(2020-04-28)
Article
Open AccessWe report a method to locally deliver a chemical etchant at the nanoscale in the vapor phase by capillary condensation forming a meniscus at the nanoparticle/substrate interface. The process is simple, scalable and does ... -
DopLa solar cells with texturized front surface
(Elsevier, 2016)
Conference report
Open AccessIn this work, we report on improving efficiency of DopLa cells fabricated on p-type substrates. This type of solar cells has all the highly-doped regions based on laser doping from dielectric films resulting in a very ... -
DopLaCell: a new c-Si solar cell based on laser processing of dielectric films
(2013)
Conference report
Restricted access - publisher's policyIn this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser ... -
Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
(American Institute of Physics, 2005-11-09)
Article
Restricted access - publisher's policySurface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ... -
Effect of nanofluid conductivity and humidity on the self-assembly of colloidal crystals by means of electrospray
(Institute of Electrical and Electronics Engineers (IEEE), 2015)
Conference lecture
Open Access -
Effect of nanofluid conductivity and humidity on the self-assembly of nanoparticles deposited by electrospray
(Institute of Electrical and Electronics Engineers (IEEE), 2015)
Conference report
Open AccessElectrospray technique has been used in previous works as an excellent way to develop ordered nanostructures. This work focuses on the necessary conditions to achieve 3D nano-ordered layers, which are mainly determined by ... -
Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films
(Elsevier, 2022-07)
Article
Open AccessSurface passivation is of paramount importance in photovoltaic devices based on high-quality crystalline absorbers such as crystalline germanium (c-Ge). In this work, we report on the surface passivation of p-type c-Ge by ... -
Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon
(American Institute of Physics (AIP), 2017-02-14)
Article
Open AccessConfocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive ... -
Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric
(2004-11)
Article
Restricted access - publisher's policyPentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ... -
Electron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells
(2018)
Conference lecture
Restricted access - publisher's policyIn the last years, our research group has focused on the development of Interdigitated Back Contacted (IBC) solar cells based on transition metal oxides. In particular, a very thin Al2O3/TiO2 stack deposited by ALD has ... -
Electronic properties of intrinsic and doped amorphous silicon carbide films
(2006-07)
Article
Restricted access - publisher's policyHydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was ... -
Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD
(2002-04)
Article
Restricted access - publisher's policyHydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors ... -
Elimination of interface energy barriers using dendrimer polyelectrolytes with fractal geometry
(2023-06-03)
Article
Open AccessIn this work we study conjugated polyelectrolyte (CPE) films based on polyamidoamine (PAMAM) dendrimers of generations G1 and G3. These fractal macromolecules are compared to branched polyethylenimine (b-PEI) polymer using ... -
Epitaxially grown crystalline silicon as electron selective contact layer for crystalline germanium TPV cells
(2023)
Conference lecture
Restricted access - publisher's policyCrystalline germanium has been proposed as a cost-effective absorber for the fabrication of thermophotovoltaic (TPV) cells which require, among other technologies, the development of electron-selective contacts. In this ... -
Examen Final
(Universitat Politècnica de Catalunya, 2013-01-08)
Exam
Restricted access to the UPC academic community
