Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), ...

In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon ...

In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ...

3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant ...

In the quest of large-scale quantum computers, multi-core distributed architectures are considered a compelling alternative to be explored. A crucial aspect in such approach is the stringent demand on communication among ...

3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...

In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in ...

Being a very promising technology, with impressive advances in the recent years, it is still unclear how quantum computing will scale to satisfy the requirements of its most powerful applications. Although continued progress ...