Now showing items 1-12 of 12

    • A comparative variability analysis for CMOS and CNFET 6T SRAM cells 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (2011)
      Conference report
      Restricted access - publisher's policy
      Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), ...
    • A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture 

      Martín Martínez, Javier; García Almudéver, Carmen; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2014-05-05)
      Article
      Restricted access - publisher's policy
    • Carbon nanotube growth process-related variablity in CNFET's 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2011)
      Conference report
      Restricted access - publisher's policy
      In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon ...
    • Comparative de la tecnología electrónica convencional y la biológica: enfásis en la función de aprendizaje 

      García Almudéver, Carmen (Universitat Politècnica de Catalunya, 2008-09-22)
      Master thesis (pre-Bologna period)
      Open Access
      En el presente proyecto, una vez realizado un amplio estudio sobre el sistema neuronal y su proceso de aprendizaje, se propone desarrollar diferentes algoritmos a partir de los cuales una máquina de estados finitos es ...
    • Impact of finfet and III-V/Ge technology on logic and memory cell behavior 

      Amat Bertran, Esteve; Calomarde Palomino, Antonio; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013-11-20)
      Article
      Restricted access - publisher's policy
      In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ...
    • Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (2011)
      Conference report
      Restricted access - publisher's policy
      In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon ...
    • Mitigation strategies of the variability in 3T1D cell memories scaled beyond 22nm 

      Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2012)
      Conference report
      Open Access
      3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant ...
    • Shape-shifting digital hardware concept: towards a new adaptive computing system 

      Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Conference lecture
      Restricted access - publisher's policy
      In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...
    • Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

      Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
      Article
      Open Access
      3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...
    • Systematic and random variability analysis of two different 6T-SRAM layout topologies 

      Amat Bertran, Esteve; Amatlle, E.; Gómez González, Sergio; Aymerich Capdevila, Nivard; García Almudéver, Carmen; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2013-09)
      Article
      Open Access
    • Variability and reliability analysis of carbon nanotube technology in the presence of manufacturing imperfections 

      García Almudéver, Carmen (Universitat Politècnica de Catalunya, 2014-07-29)
      Doctoral thesis
      Open Access
      In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in ...
    • Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Conference report
      Restricted access - publisher's policy
      Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location ...