Now showing items 1-20 of 63

    • A 16-kV HBM RF ESD Protection Codesign for a 1-mW CMOS Direct Conversion Receiver Operating in the 2.4-GHz ISM Band 

      González Jiménez, José Luis; Solar, H.; Adin, Iñigo; Mateo Peña, Diego; Berenguer, Roc (2011-09)
      Article
      Restricted access - publisher's policy
      A decreasing-sized π -model electrostatic discharge (ESD) protection structure is presented and applied to protect against ESD stresses at the RF input pad of an ultra-low power CMOS front-end operating in the 2.4-GHz ...
    • A 75 pJ/bit All-Digital Quadrature Coherent IR-UWB Transceiver in 0.18 um CMOS 

      Barajas Ojeda, Enrique; Gómez Salinas, Dídac; Mateo Peña, Diego; González Jiménez, José Luis (2010-05-23)
      Conference report
      Open Access
      In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18 μm CMOS is presented. It consumes 42 mW operating at a 560 Mbps datarate. The receiver and transmitter share most ...
    • A high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS 

      Trulls Fortuny, Xavier; Mateo Peña, Diego; Bofill, Adrià (IEEE Microwave Theory and Techniques Society, 2012-10)
      Article
      Restricted access - publisher's policy
      A high-dynamic-range programmable-gain inductorless RF front end suitable for the RF-coax bandplan of the G.hn recommendation is presented. A double-input RF programmable gain amplifier (DI-RFPGA) with switchable capacitive ...
    • A low-power RF front-end for 2.5 GHz receivers 

      Moreno Boronat, Lidia Ana; Gómez, D; González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier; Berenguer, R; Solar, H (Institute of Electrical and Electronics Engineers (IEEE), 2008)
      Conference report
      Open Access
      This paper presents a low power and low cost front end for a direct conversion 2.5 GHz ISM band receiver composed of a 16 kV HBM ESD protected LNA, differential Gilbert-cell mixers, and high-pass filters for DC offset ...
    • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

      Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
      Article
      Open Access
      Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
    • Advanced failure detection techniques in deep submicron CMOS integrated circuits 

      Rubio Sola, Jose Antonio; Altet Sanahujes, Josep; Mateo Peña, Diego (Pergamon Press, 2009)
      Conference report
      Restricted access - publisher's policy
      The test of present integrated circuits exhibits many confining aspects, among them the adequate selection of the observable variables, the use of combined testing approaches, an each time more restricted controllability ...
    • Aging compensation in a class-A high-frequency amplifier with DC temperature measurements 

      Altet Sanahujes, Josep; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Gisbert Beguer, Xavier; Martínez Domingo, Sergio; Mateo Peña, Diego (Multidisciplinary Digital Publishing Institute (MDPI), 2023-08-10)
      Article
      Open Access
      One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted ...
    • Aging in CMOS RF linear power amplifiers: an experimental study 

      Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
      Article
      Open Access
      An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
    • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

      Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Conference report
      Restricted access - publisher's policy
      This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
    • An approach to dynamic power consumption current testing of CMOS ICs 

      Segura, J A; ROCA, M; Mateo Peña, Diego; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 1995)
      Conference report
      Open Access
      I/sub DDQ/ testing is a powerful strategy for detecting defects that do not alter the logic behavior of CMOS ICs. Such a technique is very effective especially in the detection of bridging defects although some opens can ...
    • An ultra low-voltage RF front-end receiver for IoT devices 

      Malena, Francesco; Aragonès Cervera, Xavier; Mateo Peña, Diego; Caselli, Michele; Boni, Andrea (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Conference report
      Restricted access - publisher's policy
      This paper presents the design of an RF receiver front-end for IoT application, integrating a low noise amplifier (LNA) and an active mixer. The circuit is designed in 28-nm FDSOI technology, to operate on the ISM 2.4-2.5 ...
    • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

      Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafría Maqueda, Montserrat; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
      Conference report
      Restricted access - publisher's policy
      Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
    • Analysis of ISSQ/IDDQ testing implementation and circuit partitioning in CMOS cell-based design 

      Rullán Ayza, Mercedes; Ferrer Ramis, Carles; Oliver, Joan; Mateo Peña, Diego; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 1996)
      Conference report
      Open Access
      Difference between ISSQ and IDDQ testing strategies is presented, discussing the dependency of area overhead and sensing speed on the technology. The current sensor implementation style suitable for cell-based design ...
    • Behavioural modelling of DLLs for fast simulation and optimisation of jitter and power consumption 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; González Jiménez, José Luis (IEEE Computer Society Publications, 2010)
      Conference report
      Open Access
      This paper presents a behavioural model for fast DLL simulations. The behavioural model includes a modelling of the various noise sources in the DLL that produce output jitter. The model is used to obtain the dependence ...
    • BPF-based thermal sensor circuit for on-chip testing of RF circuits 

      Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran (Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
      Article
      Open Access
      A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ...
    • CATRENE-PANAMA WP1: integrated PA Milestone M1.3 technology, approach & system choice for home networking 

      Dufis, Cédric Yvan; Mateo Peña, Diego; Bofill, Adrià; González Jiménez, José Luis (2009-10-30)
      Research report
      Open Access
    • Characterization of the substrate noise spectrum for mixed-signal ICs 

      Méndez Villegas, Miguel Ángel; Mateo Peña, Diego; Rubio Sola, Jose Antonio; González Jiménez, José Luis (Institute of Electrical and Electronics Engineers (IEEE), 2005)
      Conference report
      Open Access
      This paper presents a simplified analytical model of the substrate noise generated by digital circuitry that captures the most relevant frequency domain characteristics and relates them with parameters of the digital circuit ...
    • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

      Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
      Article
      Open Access
      In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
    • Converses sobre disseny digital: dubtes a l'hora de fer una simulació 

      Altet Sanahujes, Josep; Rubio Sola, Jose Antonio; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Pons Nin, Joan; Mateo Peña, Diego; Martín, Isidro (Departament d'Enginyeria Electrònica, 2016-10-25)
      Audiovisual
      Open Access
    • DC temperature measurements for power gain monitoring in RF power amplifiers 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac; Perpiñà, Xavier; Jordà, Xavier (IEEE, 2012)
      Conference report
      Restricted access - publisher's policy
      In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof ...