Now showing items 1-4 of 4

  • Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors 

    Marsal Vinade, Albert; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo Lorente, Sergi; Alcubilla González, Ramón; Bertomeu Balaguero, Joan; Antony, Aldrin (2014-03-31)
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    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced ...
  • Density-of-states in pentacene from the electrical characteristics of thin-film transistors 

    Puigdollers i González, Joaquim; Marsal Vinade, Albert; Cheylan, Stephaie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2010-08)
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    In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in ...
  • Influence of the density of states on the open-circuit voltage in small-molecule solar cells 

    Galindo Lorente, Sergi; Ahmadpour Sayyar, Mehrad; Guerling, Luis Guillermo; Marsal Vinade, Albert; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2014-10-01)
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    Open-circuit voltages are strongly dependent on the density-of-states in solar cells based on disordered semiconductors. In this work, organic solar cells based on tetraphenyldibenzoperiflanthene and fullerene C-70 with a ...
  • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature 

    Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2009-10)
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    N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...