Now showing items 1-14 of 14

    • A 75 pJ/bit All-Digital Quadrature Coherent IR-UWB Transceiver in 0.18 um CMOS 

      Barajas Ojeda, Enrique; Gómez Salinas, Dídac; Mateo Peña, Diego; González Jiménez, José Luis (2010-05-23)
      Conference report
      Open Access
      In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18 μm CMOS is presented. It consumes 42 mW operating at a 560 Mbps datarate. The receiver and transmitter share most ...
    • DC temperature measurements for power gain monitoring in RF power amplifiers 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac; Perpiñà, Xavier; Jordà, Xavier (IEEE, 2012)
      Conference report
      Restricted access - publisher's policy
      In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof ...
    • Design of a 2.5-GHZ QVCO robust against high frequency substrate noise 

      Molina Garcia, Marc Manel; Gómez Salinas, Dídac; Aragonès Cervera, Xavier; Mateo Peña, Diego; González Jiménez, José Luis (2011-07)
      Article
      Restricted access - publisher's policy
      This work presents the design procedure followed to obtain a low-power voltage-controlled oscillator (VCO) robust against high-frequency substrate noise, using as a demonstrator a 2.5 GHz VCO with quadrature outputs (QVCO) ...
    • Design of reconfigurable RF circuits for self compensation 

      Gómez Salinas, Dídac; Mateo Peña, Diego (2010)
      Conference lecture
      Open Access
      In this paper we will show how a combination of design choices allows for the design of a PVT robust RF front-end with minimum area, power and nominal specifications penalty.
    • Electro-thermal characterization of a differential temperature sensor and the thermal coupling in a 65nm CMOS IC 

      Altet Sanahujes, Josep; González Jiménez, José Luis; Gómez Salinas, Dídac; Perpiñà, Xavier; Grauby, Stephane; Dufis, Cédric Yvan; Vellvehi, Miquel; Mateo Peña, Diego; Dilhaire, Stefan; Jordà, Xavier (2012)
      Conference report
      Restricted access - publisher's policy
      This paper explains the design decisions and the different measurements we have done in order to characterize the thermal coupling and the ch aracteristics of temperature sensors embedded in a integrated circuit ...
    • Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers 

      Altet Sanahujes, Josep; González, José Luis; Gómez Salinas, Dídac; Perpiñà Gilabet, Xavier; Claeys, Wilfrid; Grauby, Stéphane; Dufis, Cédric Yvan; Vellvehi, Miquel; Mateo Peña, Diego; Reverter Cubarsí, Ferran; Dilhaire, Stefan; Jordà, Xavier (2014-05)
      Article
      Restricted access - publisher's policy
      This paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit ...
    • Electro-thermal coupling analysis methodology for RF circuits 

      Gómez Salinas, Dídac; Mateo Peña, Diego; Altet Sanahujes, Josep (IEEE Computer Society Publications, 2010)
      Conference report
      Open Access
      In this paper we present an electro-thermal coupling simulation technique for RF circuits. The proposed methodology takes advantage of well established tools for frequency translating circuits in order to significantly ...
    • On evaluating temperature as observable for CMOS technology variability 

      Altet Sanahujes, Josep; Gómez Salinas, Dídac; Dufis, Cédric Yvan; González Jiménez, José Luis; Mateo Peña, Diego; Aragonès Cervera, Xavier; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2010-05-26)
      Conference report
      Open Access
      The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures ...
    • On line monitoring of RF power amplifiers with embedded temperature sensors 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac (IEEE, 2012)
      Conference report
      Restricted access - publisher's policy
      In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present ...
    • Process and temperature compensation for RF low-noise amplifiers and mixers 

      Gómez Salinas, Dídac; Sroka, Milosz; González Jiménez, José Luis (2009-12-18)
      Article
      Open Access
      Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain ...
    • Review of temperature sensors as monitors for RFMMW built-in testing and self-calibration schemes 

      Altet Sanahujes, Josep; Aldrete Vidrio, Héctor; Reverter Cubarsí, Ferran; Gómez Salinas, Dídac; Gonzalez Jimenez, J. L.; Onabajo, Marvin; Silva Martinez, Jose; Martineau, B.; Perpiñà Gilabet, Xavier; Abdallah, Louay; Stratigopoulos, Haralampos-G.; Aragonès Cervera, Xavier; Jordà, Xavier; Vellvehi, Miquel; Dilhaire, Stefan; Mir, Salvador; Mateo Peña, Diego (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Conference report
      Restricted access - publisher's policy
      This paper presents an overview of the work done so far related to the use of temperature sensors as performance monitors for RF and MMW circuits with the goal to implement built-in testing or self-calibration techniques. ...
    • Survey of robustness enhancement techniques for wireless systems-on-a-chip and study of temperature as observable for process variations 

      Onabajo, M.; Gómez Salinas, Dídac; Aldrete Vidrio, Eduardo; Altet Sanahujes, Josep; Mateo Peña, Diego; Silva-Martínez, José (2011-06)
      Article
      Restricted access - publisher's policy
      Built-in test and on-chip calibration features are becoming essential for reliable wireless connectivity of next generation devices suffering from increasing process variations in CMOS technologies. This paper contains ...
    • Temperature as observable magnitude in silicon integrated circuits to characterize high frequency analog circuits 

      Mateo Peña, Diego; Altet Sanahujes, Josep; Gómez Salinas, Dídac; Aragonès Cervera, Xavier (2013)
      Conference report
      Restricted access - publisher's policy
      This paper introduces a novel on-chip measurement technique for the determination of the central frequency and 3dB bandwidth of a 60GHz power amplifier (PA) by performing low frequency temperature measurements in silicon ...
    • Temperature sensors to measure the central frequency and 3 dB bandwidth in mm W power amplifiers 

      Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac; González Jiménez, José Luis; Martineau, B.; Siligaris, Alexandre; Aragonès Cervera, Xavier (2014-04)
      Article
      Restricted access - publisher's policy
      This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The ...