Now showing items 1-20 of 187

  • 2D/3D Simulations of black-silicon interdigitated back-contacted c-si(n) solar cells 

    Calle Martín, Eric; Carrió, David; Ortega Villasclaras, Pablo Rafael; von Gastrow, Guillaume; Savin, Hele; Martín García, Isidro; Alcubilla González, Ramón (WIP Renewable Energies, 2016)
    Conference lecture
    Open Access
    Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work, we apply 2D and 3D simulations to explore the ...
  • 3D metallo-dielectric structures combining electrochemical and electroplating techniques 

    Hernández Díaz, David; Lange, D.; Todorov Trifonov, Trifon; Garin Escriva, Moises; García Molina, Francisco Miguel; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2010-06)
    Article
    Restricted access - publisher's policy
    Three-dimensional (3D) periodic nickel micro-structures with a periodicity of 4 μm and high number of structural periods were fabricated by electrodeposition. Macroporous silicon, consisting of periodic arrays of sine-wave ...
  • 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts 

    Carrió, D.; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2013)
    Conference report
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    The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the ...
  • 3D TCAD modeling of laser processed c-Si solar cells 

    López González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón (Institute of Electrical and Electronics Engineers (IEEE), 2015)
    Conference report
    Restricted access - publisher's policy
    This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell ...
  • A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors 

    Castañer Muñoz, Luis María; Sureda, S; Bardés Llorensí, Daniel; Alcubilla González, Ramón (1994-03)
    Article
    Open Access
    A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The ...
  • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

    Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
    Conference report
    Open Access
  • All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region 

    Garin Escriva, Moises; Fenollosa Esteve, Roberto; Alcubilla González, Ramón; Shi, Lei; Marsal Garvi, Luis Francisco; Meseguer Rico, Francisco Javier (2014-03-10)
    Article
    Open Access
    Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show ...
  • Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition 

    Dosev, D K; Puigdollers i González, Joaquim; Orpella García, Alberto; Voz Sánchez, Cristóbal; Fonrodona, Marta; Soler Vilamitjana, David; Marsal, L F; Pallarès Marzal, Josep; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Alcubilla González, Ramón (2001-02)
    Article
    Open Access
    The stability under gate bias stress of unpassivated thin film transistors was studied by measuring the transfer and output characteristics at different temperatures. The active layer of these devices consisted of in ...
  • Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations 

    Marsal, L F; Pallares, J; Correig, X; Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón (American Institute of Physics (AIP), 1999-01)
    Article
    Restricted access - publisher's policy
    We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms ...
  • Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer 

    Todorov Trifonov, Trifon; Marsal, L F; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2004-11)
    Article
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    We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb ...
  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon 

    von Gastrow, Guillaume; Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; Yli-Koski, Marko; Conesa-Boj, Sònia; Fontcuberta i Morral, Anna; Savin, Hele (2015-11)
    Article
    Open Access
    We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination ...
  • Analysis of the conductance transient in thick film tin oxide gas sensors 

    Vilanova, X; Llobet Valero, Eduard; Alcubilla González, Ramón; Sueiras, Jl; Correig, X (Elsevier, 1996-03)
    Article
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    In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the ...
  • Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Asensi López, José Miguel; Galindo Lorente, Sergi; Cheylan, S.; Pacios, R.; Ortega Villasclaras, Pablo Rafael; Alcubilla González, Ramón (2013-06)
    Article
    Restricted access - publisher's policy
    This work studies the charge carrier collection efficiency in organic bulk-heterojunction solar cells based on polymer:fullerene blends. An equivalent circuit with a specific recombination term is proposed to describe the ...
  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
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    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...
  • An IBC solar cell for the UPC CubeSat-1 mission 

    Ortega Villasclaras, Pablo Rafael; Jové Casulleras, Roger; Pedret, A; Gonzalvez, G.; López Rodríguez, Gema; Martín García, Isidro; Domínguez Pumar, Manuel; Alcubilla González, Ramón; Camps Carmona, Adriano José (Institute of Electrical and Electronics Engineers (IEEE), 2013)
    Conference report
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    In this work the fabrication and electrical characterization of interdigitated back contact IBC solar cells is shown. These solar cells have been specifically designed for a CubeSat based satellite under developement at ...
  • Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes 

    Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón (American Institute of Physics, 2003-08-15)
    Article
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    P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...
  • A two dimensional KTiOPO4 photonic crystal grown using a macroporous silicon template 

    Peña Revellez, Alexandra; Finizio, Sergio Di; Todorov Trifonov, Trifon; Carvajal, Joan Josep; Aguiló Díaz, Magdalena; Pallarès Marzal, Josep; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Marsal Garví, Lluís Francesc; Diaz, Francesc; Martorell Pena, Jordi (2006-09)
    Article
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    2D KTiOPO4 photonic crystals are fabricated using a silicon membrane of air holes as a template. Columns of KTiOPO4 are grown by liquid-phase epitaxy from a substrate into such air holes. The crystallographic orientation ...
  • Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact 

    Gerling Sarabia, Luis Guillermo; Masmitjà Rusiñol, Gerard; Voz Sánchez, Cristóbal; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Alcubilla González, Ramón (Elsevier, 2016)
    Conference lecture
    Open Access
  • Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells 

    López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón (2015-08-28)
    Article
    Open Access
    Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ...
  • Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV 

    Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi (2006-07)
    Article
    Restricted access - publisher's policy
    Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined ...