Now showing items 1-4 of 4

    • Advances in a baseline process towards high efficiency c-Si solar cell fabrication 

      Alcubilla González, Ramón; Ortega Villasclaras, Pablo Rafael; López, G.; Martín García, Isidro; Bermejo Broto, Sandra; Blanqué, Servane; García Molina, Francisco Miguel; Orpella García, Alberto; Voz Sánchez, Cristóbal (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Conference report
      Open Access
    • Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD 

      Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Blanqué, Servane; Ibarz, D; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (2009-03)
      Article
      Restricted access - publisher's policy
      In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated ...
    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Conference report
      Open Access
      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...
    • Optimization of laser processes in n+Emitter formation for c-Si solar cells 

      Orpella García, Alberto; Martín García, Isidro; Blanqué, Servane; Voz Sánchez, Cristóbal; Sánchez, I.; Colina, M.; Molpeceres, C.; Alcubilla González, Ramón (2009-09)
      Conference report
      Open Access
      Punctual phosphorus diffused emitters were achieved by laser patterning phosphorus doped a-SiCx:H films deposited by PECVD as a doping source. Two different lasers at wavelengths of 1064 nm and 532 nm were used. Phosphorus ...