Exploració per autor "Moreno Sierra, César"
Ara es mostren els items 1-4 de 4
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Comparison between the density-of-states of picene transistors measured in air and under vacuum
Voz Sánchez, Cristóbal; Marsal, Albert; Moreno Sierra, César; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2012-01)
Article
Accés restringit per política de l'editorialPicene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect ... -
Conceptual design of the EU-DEMO dual coolant lithium lead equatorial module
Rapisarda, David; Fernández, I.; Palermo, I.; González, M.; Moreno Sierra, César; Moreno, C.; Mas de les Valls Ortiz, Elisabet (2016-09-01)
Article
Accés obertWithin the framework of EUROfusion Program, the Dual Coolant Lithium Lead (DCLL) is one of the four EU breeder blanket concepts that are being investigated as candidates for DEMO. DCLL uses PbLi as the main coolant, tritium ... -
Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor
Moreno Sierra, César; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers i González, Joaquim; Bromley, Stephan; Rovira, Concepció; Alcubilla González, Ramón; Veciana, Jaume (2011-11-16)
Article
Accés restringit per política de l'editorialTheoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) ... -
Restraints in low dimensional organic semiconductor devices at high current densities
Pfattner, Raphael; Moreno Sierra, César; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Rovira, Concepció; Puigdollers i González, Joaquim; Mas Torrent, Marta (2014-01)
Article
Accés restringit per política de l'editorialThe understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work ...