Exploració per autor "Nafría Maqueda, Montserrat"
Ara es mostren els items 1-20 de 20
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A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture
(2014-05-05)
Article
Accés restringit per política de l'editorial -
A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI
(2018-01-01)
Article
Accés obertStatistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ... -
Aging in CMOS RF linear power amplifiers: an experimental study
(IEEE Microwave Theory and Techniques Society, 2021-02-01)
Article
Accés obertAn extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ... -
Aging in CMOS RF linear power amplifiers: experimental comparison and modeling
(Institute of Electrical and Electronics Engineers (IEEE), 2019)
Text en actes de congrés
Accés restringit per política de l'editorialThis paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ... -
Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés restringit per política de l'editorialElectronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ... -
Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers
(Institute of Electrical and Electronics Engineers (IEEE), 2014)
Text en actes de congrés
Accés obertA new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate ... -
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging
(2022-05-01)
Article
Accés restringit per política de l'editorialIn this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ... -
Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialThis paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ... -
Experimental Characterization of NBTI Effect on pMOSFET and CMOS Inverter
(2009-02)
Comunicació de congrés
Accés obert -
Experimental investigation of memristance enhancement
(2019)
Text en actes de congrés
Accés restringit per política de l'editorialMemristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ... -
Experimental time evolution study of the HFO-based IMPLY gate operation
(2018-02-01)
Article
Accés obertIn the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ... -
Experimental verification of memristor-based material implication NAND operation
(Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
Article
Accés obertMemristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ... -
Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices
(2020-03-01)
Article
Accés obertResistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ... -
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
(2021-10-01)
Article
Accés obertIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
MOSFET degradation dependence on input signal power in a RF power amplifier
(2017-06-25)
Article
Accés obertAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ... -
Noise-induced Performance Enhancement of Variability-aware Memristor Networks
(2019)
Text en actes de congrés
Accés restringit per política de l'editorialMemristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ... -
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
(2021-04)
Article
Accés obertResistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ... -
Shape-shifting digital hardware concept: towards a new adaptive computing system
(IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
Comunicació de congrés
Accés restringit per política de l'editorialIn this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ... -
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialRandom Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ... -
Stochastic resonance effect in binary STDP performed by RRAM devices
(Institute of Electrical and Electronics Engineers (IEEE), 2022)
Text en actes de congrés
Accés obertThe beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...
